STH315N10F7-2 / TO-263-3 / MOSFETs

STH315N10F7-2 / TO-263-3 / MOSFETs

These N-channel Power MOSFETs utilize STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.

Haoxin Electronic Technology Co., LTD., founded in May 2016, is an excellent independent distributor of electronic components.

We now have offices in United States, Singapore, Shenzhen and Shanghai. The company's founders and senior management team are experienced, with strong strength and resources, all from the TOP10 agents and distributors.

Company headquarters is located in Shenzhen Futian District CBD 5A office building China Aviation Center 25 floor.

Our customers cover the world, including medical equipment, communications manufacturing, automotive electronics, industrial control and many other customers at home and abroad, committed to providing customers with professional supply chain solutions.