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Categories | Flash Memory IC Chip |
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Brand Name: | Ti |
Model Number: | CSD13381F4 |
MOQ: | Contact us |
Price: | Contact us |
Payment Terms: | Paypal, Western Union, TT |
Supply Ability: | 50000 Pieces per Day |
Delivery Time: | The goods will be shipped within 3 days once received fund |
Packaging Details: | SMD |
Description: | MOSFET N-CH 12V 2.1A 3PICOSTAR |
Channel Mode: | Enhancement |
Configuration: | Single |
Minimum Operating Temperature: | - 55 C |
Maximum Operating Temperature: | + 150 C |
Product Category: | MOSFET |
Manufacturer: | Texas Instruments |
CSD13381F4 Mosfet Power Transistor MOSFET 12V N-CH Pwr MOSFET
1 Features
Low Qg and Qgd
Low Threshold Voltage
Ultra-Small Footprint (0402 Case Size)
– 1.0mm×0.6mm
Ultra-Low Profile
– 0.35 mm Height
Integrated ESD Protection Diode
– Rated >4 kV HBM
– Rated >2 kV CDM
Lead and Halogen Free
RoHS Compliant
2 Applications
Optimized for Load Switch Applications
Optimized for General Purpose Switching Applications
Single-Cell Battery Applications
Handheld and Mobile Applications
3 Description
This 140 mΩ, 12 V N-channel FemtoFETTM MOSFET technology is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size.
Product Summary
TA = 25°C | TYPICAL VALUE | UNIT | ||
VDS | Drain-to-Source Voltage | 12 | V | |
Qg | Gate Charge Total (4.5 V) | 1060 | pC | |
Qgd | Gate Charge Gate-to-Drain | 140 | pC | |
RDS(on) | Drain-to-Source On-Resistance | VGS = 1.8 V | 310 | mΩ |
VGS = 2.5 V | 170 | mΩ | ||
VGS = 4.5 V | 140 | mΩ | ||
VGS(th) | Threshold Voltage | 0.85 | V |
Ordering Information
Device | Qty | Media | Package | Ship |
CSD13381F4 | 3000 | 7-Inch Reel | Femto (0402) 1.0 mm x 0.6 mm SMD Lead Less | Tape and Reel |
CSD13381F4T | 250 |
Absolute Maximum Ratings
TA = 25°C unless otherwise stated | VALUE | UNIT | |
VDS | Drain-to-Source Voltage | 12 | V |
VGS | Gate-to-Source Voltage | 8 | V |
ID | Continuous Drain Current, TA = 25°C(1) | 2.1 | A |
IDM | Pulsed Drain Current, TA = 25°C(2) | 7 | A |
IG | Continuous Gate Clamp Current | 35 | mA |
Pulsed Gate Clamp Current(2) | 350 | ||
PD | Power Dissipation(1) | 500 | mW |
ESD Rating | Human Body Model (HBM) | 4 | kV |
Charged Device Model (CDM) | 2 | kV | |
TJ, Tstg | Operating Junction and Storage Temperature Range | –55 to 150 | °C |
EAS | Avalanche Energy, single pulse ID = 7.4 A, L=0.1mH,RG =25Ω | 2.7 | mJ |
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