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Categories RF JFET Transistors
Vgs - Gate-Source Breakdown Voltage :: - 8 V
Technology :: GaAs
Product Category :: RF JFET Transistors
Mounting Style :: SMD/SMT
Gain :: 11 dB
Transistor Type :: pHEMT
Package / Case :: Die 18
Maximum Operating Temperature :: + 150 C
Vds - Drain-Source Breakdown Voltage :: 12 V
Packaging :: Gel Pack
Id - Continuous Drain Current :: 3.6 A
Manufacturer :: Qorvo
Description: RF JFET Transistors DC-12GHz 12mm Pwr pHEMT (0.35um)
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TGF2021-12

The TGF2021-12,from Qorvo,is RF JFET Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
Buy TGF2021-12 at wholesale prices
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