| Sign In | Join Free | My enlightcorp.com |
|
| Sign In | Join Free | My enlightcorp.com |
|
| Categories | Semiconductor Substrate |
|---|---|
| Brand Name: | zmkj |
| Model Number: | GASb |
| Place of Origin: | CHINA |
| MOQ: | 3pcs |
| Price: | by case |
| Payment Terms: | T/T, Western Union |
| Supply Ability: | 500pcs |
| Delivery Time: | 2-4weeks |
| Packaging Details: | single wafer package in 1000-grade cleaning room |
| Material: | Gallium antimonide GaSb Substrate |
| growth method: | vFG |
| SIZE: | 2-4INCH |
| Thickness: | 300-800um |
| application: | III-V direct bandgap semiconductor material |
| surface: | ssp/dsp |
| package: | single wafer box |
| Company Info. |
| SHANGHAI FAMOUS TRADE CO.,LTD |
| Verified Supplier |
| View Contact Details |
| Product List |
2-4inch Gallium antimonide GaSb Substrate Single Crystal Monocrystal for Semiconductor
Gallium antimonide (GaSb) is a very important III-V direct bandgap semiconductor material. It is a key material for Class II superlattice uncooled medium-long-wave infrared detectors and focal plane arrays; uncooled medium-long-wave infrared detectors It has the advantages of long life, light weight, high sensitivity and high reliability. The product is widely used in infrared lasers, infrared detectors, infrared sensors and thermal photovoltaic cells.
The main growth methods of GaSb single crystal materials include traditional liquid-sealed straight-drawing technology (LEC), mobile heating/vertical gradient solidification (VGF)/vertical Bridgman technology.
| 2-4inch or customized | |||||||
| specification | |||||||
| single crystal | dope | type | Ion carrier concentration cm-3 | mobility rate (cm2/V.s) | MPD(cm-2) | SIZE | |
| GaSb | no | I | (1-2)*1017 | 600-700 | <1*104 | Φ2″×0.5mm Φ3″×0.5mm | |
| GaSb | Zn | P | (5-100) *1017 | 200-500 | <1*104 | Φ2″×0.5mm Φ3″×0.5mm | |
| GaSb | Te | N | (1-20)*1017 | 2000-3500 | <1*104 | Φ2″×0.5mm Φ3″×0.5mm | |
| SIZE(mm) | Dia50.8x0.5mm,10×10×0.5mm,10×5×0.5mmCan be customized | ||||||
| Ra | Surface roughness(Ra):<=5A | ||||||
| polish | single or double side polished | ||||||
| package | 100 grade cleaning plastic box under 1000 grade cleaning room | ||||||
---FAQ –
A: Generally it is 5-10 days if the goods are in stock. or it is 15-20 days if the goods are not
in stock,it is according to quantity.
|
InAs Substrate 2inch 3inch 4inch 5inch 6inch Un/S/Zn Type N/P Polished DSP/SSP
MgO Wafer 111 100 Polished Magnesium Oxide Monocrystal Semiconductor Customized
2inch 4inch 6inch 8inch 12inch Si Wafer Silicon Wafer Polishing Undoped P Type N Type Semiconductor
InP wafer 2inch 3inch 4inch VGF P type N type Depant Zn S Fe Undoped Prime Grade Testing Grade
GaP Wafer 2inch N Type Undoped S Doped 100 DSP SSP CZ High Purity 5N 99.999%
Single Crystal InP Indium Phosphide Wafers 350 - 650um Thickness
2 Inch 1000nm AlN Film Silicon Based Aluminum Nitride Semiconductor Substrate
6 Inch Sapphire Based AlN Templates Wafer For 5G BAW Devices Sapphire wafer sapphire window
4" Sapphire Based GaN Templates Semiconductor Substrate
6" Silicon Based AlN Templates 500nm AlN Film On Silicon Substrate
