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PD57018-E RF Metal Oxide Semiconductor Field Effect (RF MOSFET) Transistors Black RF MOSFET Transistors

Categories MCU Microcontroller Unit
Brand Name: ST
Model Number: PD57018-E
MOQ: 1000
Payment Terms: T/T
Supply Ability: 5k-10k per day
Delivery Time: 5-8 work days
Packaging Details: Package: QFN
Type: integrated circuit
D/C: 2021+
Frequency - Switching:: standard
Output power: 18 W
Minimum operating temperature: - 65 C
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PD57018-E RF Metal Oxide Semiconductor Field Effect (RF MOSFET) Transistors Black RF MOSFET Transistors

Product name:PD57018-E
Manufacturer: STMicroelectronicsProduct Category: RF Metal Oxide Semiconductor Field Effect (RF MOSFET) Transistors
Transistor Polarity: N-ChannelTechnology: Si
Id-Continuous Drain Current: 2.5 AVds-drain-source breakdown voltage: 65 V
Rds On-Drain Source On Resistance: 760 mOhmsOperating frequency: 1 GHz
Gain: 16.5 dBOutput power: 18 W
Minimum operating temperature: - 65 CMaximum operating temperature: + 150 C
Installation style: SMD/SMTPackage/Case: PowerSO-10RF-Formed-4
Package: TubeBrand: STMicroelectronics
Channel Mode: EnhancementConfiguration: Single
Forward Transconductance - Min: 1 SHeight: 3.5 mm
Length: 7.5 mmMoisture Sensitivity: Yes
Pd-Power Dissipation: 31.7 WProduct Type: RF MOSFET Transistors
Series: PD57018-EFactory Packing Quantity: 400
Subcategory: MOSFETsType: RF Power MOSFET
Vgs - Gate-Source Voltage: 20 VWidth: 9.4 mm
Unit weight: 3 g

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