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10 Microseconds Rise Time Si Photodiode

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10 microseconds rise time si photodiode

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S4584-04 10 Microseconds Rise Time and 1 X 3.5 Mm Photosensitive Area Si Photodiode for Sensing

Product Description: The UV Photodiode Sensor has an electrode resistance (typical) of 140 KOhms, which ensures accurate measurements and high sensitivity. Its photosensitive area measures 1 X 3.5 Mm, providing a large detection area for efficient UV light......

ShenzhenYijiajie Electronic Co., Ltd.

Address: Room 3306AB 33rd Floor, SEG Plaza,Huaqiang North Road, Futian District, Shenzhen Guangdong Province 518028

MBRF30100VT+ Diode Triode Transistor Mosfet Array Ic 600V 15A To247

... Configuration: Single Technology: Si Fall Time: 77 ns Mounting Style: Through Hole Height: 16.3 mm Package / Case: TO-220-3 Length: 10.67 mm Transistor Polarity: N-Channel Product Type: MOSFET Number of Channels: 1 Channel Rise Time: 69 ns Vds - Drain...

ShenZhen QingFengYuan Technology Co.,Ltd.

Address: Room 2808-2809, Duhuixuan, No. 3018, Shennan Avenue, Huahang Community, Huaqiang North Street, Futian District, Shenzhen

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