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1200v Igbt Power Transistor

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1200v igbt power transistor

from 410 Products

650V-1200V IGBT Power Transistor For High Power Electronic Controls

China 650V-1200V IGBT Power Transistor For High Power Electronic Controls on sale
...Power Transistor IGBT For High-Power Electronic Controls Product Description: The High-Power IGBT is packaged in a TO-247 package type, which is ideal for high-power applications. It has a voltage rating of 650V-1200V and can operate at an application frequency of 20KHz-60KHz, making it suitable for various applications. One of the key features of the High-Power IGBT......
Guangdong Lingxun Microelectronics Co., Ltd

Address: No.7,XingRong Road,ShiJie Town,Dongguan City,Guangdong Province,China

FF450R12KT4 IGBT power transistor module 450A 1200V High Voltage Igbt Power Supply Module IGBT Modules N-CH 1.2KV 580A

China FF450R12KT4 IGBT power transistor module 450A 1200V High Voltage Igbt Power Supply Module IGBT Modules N-CH 1.2KV 580A on sale
... module designed to meet the demanding requirements of modern electronic systems. With its advanced features and reliable performance, this module offers exceptional power handling capabilities and efficient operation. Features 1:High Power Handling: The...
Shenzhen Retechip Electronics Co., Ltd

Address: Room L, 23rd Floor, Building B, Duhui 100, Zhonghang Rd, Futian District, Shenzhen City, Guangdong

IRG7PH42UDPBF IGBT Power Transistors 1200V 85A 320W TO247AC Infineon Technologies 7PH42 Mosfet

China IRG7PH42UDPBF IGBT Power Transistors 1200V 85A 320W TO247AC Infineon Technologies 7PH42 Mosfet on sale
...IGBT Power Module Transistors IGBTs Single IRG7PH42UDPBF Specifications Part Status Active IGBT Type Trench Voltage - Collector Emitter Breakdown (Max) 1200V Current - Collector (Ic) (Max) 85A Current - Collector Pulsed (Icm) 90A Vce(on) (Max) @ Vge, Ic 2V @ 15V, 30A Power......
KZ TECHNOLOGY (HONGKONG) LIMITED

Address: RM4,16/F HO KING COMM CRT 2-16 FAYUEN ST MONGKOKKL

IXYK110N120A4 IGBT Power Transistor 1200V 375A 1360W Through Hole TO-264

China IXYK110N120A4 IGBT Power Transistor 1200V 375A 1360W Through Hole TO-264 on sale
... thin-wafer technology and a state-of-the-art 4th generation (GenX4™) trench IGBT process. These insulated-gate bipolar transistors feature reduced thermal resistance, low energy losses, fast switching, low tail current, and high current densities. The...
HongKong Wei Ya Hua Electronic Technology Co.,Limited

Address: Room 3001-2, Tower A, World Trade Plaza, No. 9 Fuhong Road, Futian District, Shenzhen

Automotive IGBT Modules GD900SGF120A3SN 900A 1200V IGBT Power Modules A3 Package

China Automotive IGBT Modules GD900SGF120A3SN 900A 1200V IGBT Power Modules A3 Package on sale
Automotive IGBT Modules GD900SGF120A3SN 900A 1200V IGBT Power Modules A3 Package [MJD Advantage] + 15 years experience for electronic components + Secure Ordering + Excellent Feedback + Delivery ......
ShenZhen Mingjiada Electronics Co.,Ltd.

Address: 1239 New Asia Guoli Building Zhenzhong Road.,Futian district Shenzhen China

Circuit Control Field Stop IGBT Power Transistor FGH60N60SMD 600V 60A

China Circuit Control Field Stop IGBT Power Transistor FGH60N60SMD 600V 60A on sale
... Parameter Distribution • RoHS compliant Applications • Solar Inverter, UPS, SMPS, PFC • Induction Heating Using Novel Field Stop IGBT Technology,...
Shenzhen Koben Electronics Co., Ltd.

Address: C12F, Huaqiang Plaza, Huaqiangbei Shenzhen,China 518031

Bipolar IGBT Power Transistor Through Hole

China Bipolar IGBT Power Transistor Through Hole on sale
...Transistor Normal Temperature Product Description: An Insulated Gate Bipolar Transistor (IGBT) is a new and versatile electronic device with insulated gate, designed for use in general purpose applications. This device is designed to provide superior performance in demanding applications where normal voltage is required. The IGBT has the best of both worlds: the fast switching speed of a bipolar junction transistor...
MMR TECHNOLOGY HK LIMITED

Address: Suite 9A, 9/F, Hennessy Plaza, 164-166 Hennessy Road, Wanchai, HK

Industrial 1200V SiC Power Transistors , Stable High Voltage N Channel Mosfet

China Industrial 1200V SiC Power Transistors , Stable High Voltage N Channel Mosfet on sale
... Oxide Semiconductor Field Effect Transistor (SiC MOSFETs) are an advanced type of power device, with high efficiency and excellent performance. SiC MOSFETs feature low on-resistance and high power capabilities, enabling reliable operation and superior......
Reasunos Semiconductor Technology Co., Ltd.

Address: 405,4F, B2 Bldg, Tian'an Cyber Park, No.1 Huangjin Road,Nancheng District, Dongguan City, Guangdong Province

Hot selling FF300R12KS4 300A 1200V IGBT Power Module original new chip

China Hot selling FF300R12KS4 300A 1200V IGBT Power Module original new chip on sale
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ShenZhen QingFengYuan Technology Co.,Ltd.

Address: Room 2808-2809, Duhuixuan, No. 3018, Shennan Avenue, Huahang Community, Huaqiang North Street, Futian District, Shenzhen

STARPOWER IGBT Power Module GD300HFL120C2S 1200V / 300A Molding Type Durable

China STARPOWER IGBT Power Module GD300HFL120C2S 1200V / 300A Molding Type Durable on sale
...IGBT POWER Module GD300HFL120C2S ,1200V /300A Molding Type Module Molding Type Module 1200V/300A 2 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features Low VCE(sat) SPT+ IGBT......
Hontai Machinery and equipment (HK) Co. ltd

Address: 27P , Block B , Duhui 100 , Zhonghang Road , Futian District , Shenzhen , China

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