STGW80H65DFB Insulated Gate Bipolar Transistor IGBT Transistor 650V 80A 469W
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...Gate Bipolar Transistor 650V 80A 469W IGBT Transistors Applications • Photovoltaic inverters • High frequency converters Specifications Product Attribute Attribute Value Manufacturer: STMicroelectronics Product Category: IGBT Transistors Technology: Si Package / Case: TO-247-3 Mounting Style: Through Hole Configuration: Single......
Shenzhen Retechip Electronics Co., Ltd
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Stable Charging Pile Ultra Fast IGBT , Industrial Insulated Gate Bipolar Transistor
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Product Description: High Power IGBT is a type of high power bipolar transistor, specifically a type of insulated-gate bipolar transistor (IGBT). It is an advanced semiconductor device with an excellent combination of low conduction losses, high switching ......
Reasunos Semiconductor Technology Co., Ltd.
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Stable Charging Pile Ultra Inverter IGBT , Industrial Insulated Gate Bipolar Transistor
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Stable Charging Pile Ultra Inverter IGBT , Industrial Insulated Gate Bipolar Transistor Features • Positive temperature coefficient • Fast Switching • Low VCE(sat) • Reliable and Rugged High ruggedness performance • Very tight parameter distribution • ......
Guangdong Lingxun Microelectronics Co., Ltd
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APT50GT60BRDQ2G Insulated Gate Bipolar Transistor IGBT Module Microsemi Corporation 50GT60
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...Transistors IGBTs Single APT50GT60BRDQ2G Specifications Part Status Active IGBT Type NPT Voltage - Collector Emitter Breakdown (Max) 600V Current - Collector (Ic) (Max) 110A Current - Collector Pulsed (Icm) 150A Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 50A Power - Max 446W Switching Energy 995µJ (on), 1070µJ (off) Input Type Standard Gate Charge......
KZ TECHNOLOGY (HONGKONG) LIMITED
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FDPF10N60NZN Channel Npn Bipolar Transistor 38W Tc Through Hole TO 220F
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FDPF10N60NZ NPN PNP Transistors N-Channel 600V 10A (Tc) 38W (Tc) Through Hole TO-220F N-Channel MOSFET 600V, 10A, 0.75 Features •RDS(on) = 0.64 ( Typ.)@ VGS = 10V, ID = 5A • Low Gate Charge ( Typ. 23nC) • Low Crss ( Typ. 10pF) • Fast Switching • 100% ......
DELI ELECTRONICS TECHNOLOGY CO.,LTD
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TO-247-3 Through Hole IXYH55N120C4 1200V 140A 650W Single IGBT Transistors
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...Single IGBT Transistors Product Description Of IXYH55N120C4 IXYH55N120C4's thin wafer technology and improved processes enable a low gate charge QG, hence, low gate-current requirement. Specification Of IXYH55N120C4 Part Number IXYH55N120C4 Technology: Si Mounting Style: Through Hole Configuration: Single......
ShenZhen Mingjiada Electronics Co.,Ltd.
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VS-GT80DA120U Insulated Gate Bipolar Transistor Vishay Semiconductors
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IGBT Module Trench Single 1200 V 139 A 658 W Chassis Mount SOT-227...
UDEL Chips Tech Co., Ltd.
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AP5N10SI N Channel Mosfet Power Transistor For Battery Powered System
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...Power Transistor For Battery Powered System N Channel Mosfet Power Transistor Description: The AP5N10SI is the single N-Channel logic enhancement mode power field effect transistors to provide excellent R DS(on), low gate charge and low gate resistance. It......
Shenzhen Hua Xuan Yang Electronics Co.,Ltd
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CA3140AMZ IC Chip BiMOS Operational Amplifier with MOSFET Input/Bipolar Output
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...voltage PMOS transistors with high voltage bipolar transistors on a single monolithic chip. The CA3140A and CA3140 BiMOS operational amplifiers feature gate protected MOSFET (PMOS) transistors in the input circuit to provide very high input impedance, very...
ChongMing Group (HK) Int'l Co., Ltd
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H20R1203 IGBT H20R1203 Transistor H20R120 H30R1602 H30R1353 H25R1202 FGA25N120 Induction Cooker Power Tube TO-247
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...(on) (Max) @ Vge, Ic 1.7V @ 15V, 20A Power - Max 310W Switching Energy 950µJ (off) Input Type Standard Gate Charge 211nC Td (on...
Shenzhen Quanyuantong Electronics Co., Ltd.
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