NPT Series 43A 1200V N Channel IGBT , HGTG11N120CND Anti Parallel Hyperfast Diode
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Buy HGTG11N120CND: The Ultimate Solution for High-Power Switching Pros and Cons of HGTG11N120CND: Is it Worth the Investment? Are you looking for a reliable high-power switching solution? Look no further than HGTG11N120CND. This device is designed to ......
Yougou Electronics (Shenzhen) Co., Ltd.
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IGBT Power Module MBM50F12 - TOSHIBA - Silicon N-channel IGBT
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Quick Detail: Silicon N-channel IGBT Description: Silicon N-channel IGBT Applications: * High speed, low loss IGBT module. * Low driving power due to low input capacitance MOS gate. * Low noise due to ultra soft fast recovery ......
Mega Source Elec.Limited
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Dua Channel IGBT Driver SCALETM-2 IGBT And MOSFET Driver Core IGBT Transistor
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Dua Channel IGBT Driver SCALETM-2+IGBT and MOSFET Driver Core Q1. What is your terms of packing? A: Generally, we pack our goods in neutral white boxes and brown cartons. If you have legally registered patent, we can pack the goods in your branded boxes......
Shenzhen Hongxinwei Technology Co., Ltd
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Automotive IGBT Modules MSC100SM70JCU3 N-Channel IGBT Silicon Carbide Modules 365W
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Automotive IGBT Modules MSC100SM70JCU3 N-Channel IGBT Silicon Carbide Modules 365W Product Description Of MSC100SM70JCU3 MSC100SM70JCU3 is Silicon carbide (SiC) Schottky diode, a buck chopper ......
ShenZhen Mingjiada Electronics Co.,Ltd.
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60A 650V N Channel IGBT For Energy Storage Solar String Inverter
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60A 650V N-Channel High Power IGBT For Energy Storage Solar String Inverter MAIN CHARACTERISTICS Ic @TC=100℃ 60A VCE 650V VCE(sat)-typ 1.8V FEATURES • Trench and field-stop technology • Easy parallel switching capability APPLICATIONS • Energy storage • ......
Guangdong Lingxun Microelectronics Co., Ltd
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TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT Silicon N Channel IGBT High Power Switching 30J127
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TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J121 High Power Switching Applications Fast Switching Applications • The 4th generation • Enhancement-mode • Fast switching (FS): ......
Anterwell Technology Ltd.
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GT20J301 Toshiba Insulated Gate Bipolar Transistor Silicon N Channel IGBT
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GT20J301 : N Channel ( High Power Switching Motor Control Applications ) Toshiba Toshiba Insulated Gate Bipolar Transistor Silicon N Channel IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS ●The 3rd Generation ●Enhancement-Mode ●High......
DELI ELECTRONICS TECHNOLOGY CO.,LTD
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N Channel IGBT Integrated Circuit IC Chip STGP7NC60HD GP7NC60HD TO220 With Ultrafast Diode
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STGP7NC60HD GP7NC60HD TO220 N-channel very fast IGBT with Ultrafast diode Description These devices are very fast IGBT developed using advanced PowerMESH™ technology. This process guarantees an excellent trade-off between switching performance and low......
Shenzhen Koben Electronics Co., Ltd.
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Transistor RJP30E2 Silicon N Channel IGBT LCD IC Chip TO-3P
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Product Detail 1. Stock,Order goods or Manufacturing welcome. 2. Sample order. 3. We will reply you for your inquiry in 24 hours. 4. After sending, we will track the products for you once every two days, until you get the products. 5. When you got the ......
Shenzhen Quanyuantong Electronics Co., Ltd.
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HGTG11N120CND NPT GBT Anti Parallel Hyperfast Diode 43A 1200V
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...Channel IGBT Anti-Parallel Hyperfast Diode 43A 1200V Description : The HGTG11N120CND is a Non-Punch Through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT......
ChongMing Group (HK) Int'l Co., Ltd
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