STP80NF55-08 P80NF55-08 MOSFET N-Channel 55V 80A (Tc) 300W (Tc) Through Hole TO-220 Chinese
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... N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 55V Current - Continuous Drain (Id) @ 25°C 80A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 8mOhm @ 40A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg......
Shenzhen Quanyuantong Electronics Co., Ltd.
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STU60N55F3 Field Effect Transistor Transistors FETs MOSFETs Single
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...Drain to Source Voltage (Vdss) 55V Current - Continuous Drain (Id) @ 25°C 80A (Tc) Drive Voltage (Max Rds On,Min Rds On) - Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 45nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 2200pF @ 25V Vgs (Max) - FET Feature - Power Dissipation (Max) 110W (Tc) Rds On (Max) @ Id......
KZ TECHNOLOGY (HONGKONG) LIMITED
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IC Chip IPD050N10N5ATMA1 N-Channel 100V 80A 150W Transistors Surface Mount
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...80A 150W Transistors Surface Mount Product Description Of IPD050N10N5ATMA1 IPD050N10N5ATMA1 is N-Channel 100 V 80A (Tc) 150W (Tc) Surface Mount PG-TO252-3 Transistors. Specification Of IPD050N10N5ATMA1 Part Number IPD050N10N5ATMA1 Transistor Polarity: N-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 100 V Id - Continuous Drain......
ShenZhen Mingjiada Electronics Co.,Ltd.
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FDD86367 MOSFET Power Electronics TO-252-3 Transistor High Performance Efficiency Reliable Solution
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...Transistor High Performance Efficiency Reliable Solution FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 80 V Current - Continuous Drain (Id) @ 25°C 100A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 4.2mOhm @ 80A, 10V Vgs(th) (Max) @ Id......
Shenzhen Sai Collie Technology Co., Ltd.
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High Frequency Mosfet Power Transistor For Telecom / Industrial Use IRLR7843TRPBF
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... Parameter Max. Units VDS Drain-to-Source Voltage 30 V VGS Gate-to-Source Voltage ± 20 ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 161f A ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 113f IDM Pulsed Drain Current c 620 PD @TC = 25°C...
Shenzhen ATFU Electronics Technology ltd
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IPP65R110CFDA Diode Transistor And Thyristor N-Channel 650 V 31.2A Tc 277.8W Tc PG-TO220-3
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... Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650 V Current - Continuous Drain (Id) @ 25ﾂｰC 31.2A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 110mOhm @ 12.7A, 10V Vgs(th) (Max) @ Id 4...
Shenzhen Zhaocun Electronics Co., Ltd.
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IRFB31N20DPBF smd power mosfet dual power mosfet Power Mosfet Transistor HEXFET® Power MOSFET
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... COSS to Simplify Design,(See AN 1001) Fully Characterized Avalanche Voltage and Current Absolute Maximum Ratings Parameter Max. Unit ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 31 A ID @ TC = 100°C Continuous Drain Current,...
Anterwell Technology Ltd.
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IRF1407PBF N-Channel 75 V 130A (Tc) 330W (Tc) Through Hole TO-220AB RF Transistors
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...Tc) 330W (Tc) Through Hole TO-220AB RF Transistors Manufacturer: Infineon Product Category: MOSFETs RoHS: - REACH - SVHC: - Technology: Si Mounting Style: Through Hole Package / Case: TO-220-3 Transistor Polarity: N-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 75 V Id - Continuous Drain Current: 130 A Rds On - Drain......
Wisdtech Technology Co.,Limited
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High Frequency Mosfet Power Transistor For Telecom / Industrial Use IRLR7843TRPBF
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... Parameter Max. Units VDS Drain-to-Source Voltage 30 V VGS Gate-to-Source Voltage ± 20 ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 161f A ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 113f IDM Pulsed Drain Current c 620 PD @TC = 25°C...
ChongMing Group (HK) Int'l Co., Ltd
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High Voltage Single Mosfet Power Transistor SIHB22N60E - E3 600V 21A Package D2PAK
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... Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 21A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 180 mOhm @ 11A, 10V Vgs(th)...
Shenzhen Koben Electronics Co., Ltd.
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