512Mbit Parallel 100 ns 56-TSOP S29GL512S10TFI020 FLASH - NOR Memory IC
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512Mbit Parallel 100 ns 56-TSOP S29GL512S10TFI020 FLASH - NOR Memory IC Product Description Of S29GL512S10TFI020 S29GL512S10TFI020 feature a Write Buffer that allows a maximum of 256 words/512 bytes to be programmed in one operation, resulting in faster ......
ShenZhen Mingjiada Electronics Co.,Ltd.
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New Programmable IC Chip S29GL128P90TFIR2 FLASH - NOR Memory IC 128Mbit Parallel 90 Ns 56-TSOP
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New Programmable IC Chip S29GL128P90TFIR2 FLASH - NOR Memory IC 128Mbit Parallel 90 Ns 56-TSOP PRODUCT DESCRIPTION Part number S29GL128P90TFIR2 is manufactured by Infineon Technologies and distributed by Stjk. As one of the leading distributors of ......
STJK(HK) ELECTRONICS CO.,LIMITED
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SRAM 2Mb EMMC Memory Chips 256Kx8 10ns Async SRAM 3.3V
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IS61LV2568L-10T SMD / SMT SRAM 2Mb 256Kx8 10ns Async SRAM 3.3v FEATURES • High-speed access time: 8, 10 ns • Operating Current: 50mA (typ.) • Standby Current: 700µA (typ.) • Multiple center power and ground pins for greater noise immunity • Easy memory ......
Walton Electronics Co., Ltd.
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MT28EW256ABA1LJS-0SIT Flash Memory Chip 56-TSOP Package High Performance and Reliable Data Storage
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... Memory Interface Parallel Write Cycle Time - Word, Page 60ns Access Time 75 ns Voltage - Supply 2.7V ~ 3.6V Operating Temperature -40°C ~ 85°C (TA) Mounting Type Surface Mount Package / Case 56-TFSOP (0.724", 18.40mm Width)...
Shenzhen Sai Collie Technology Co., Ltd.
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JS28F256P30BFE Flash - Nor Memory IC 256Mb 16Mx16 Parallel 40MHz 110ns 56-TSOP
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JS28F256P30BFE FLASH - NOR Memory IC 256Mb (16M x 16) Parallel 40MHz 110ns 56-TSOP Product Attributes Memory Type Non-Volatile Memory Format FLASH Technology FLASH - NOR Memory Size 256Mb (16M x 16) Clock Frequency 40MHz Write Cycle Time - Word, Page 110ns......
Shenzhen Koben Electronics Co., Ltd.
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MX29GL512FHT2I-10Q Write Cycle Time - Word, Page 100ns Access Time 100 ns Voltage - Supply 2.7V ~ 3.6V
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MX29GL512FHT2I Product Status Not For New Designs Memory Type Non-Volatile Memory Format FLASH Technology FLASH - NOR Memory Size 512Mb (64M x 8) Memory Interface Parallel Write Cycle Time - Word, Page 100ns Access Time 100 ns Voltage - Supply 2.7V ~ 3.6V ......
Mega Source Elec.Limited
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Memory 512Mb Integrated Circuit Chip 100ns MX29GL512FHT2I 10Q
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MX29GL512FHT2I-10Q WRITE CYCLE TIME - WORD, PAGE 100NS ACCESS TIME 100 NS VOLTAGE - SUPPLY 2.7V ~ 3.6V MX29GL512FHT2I Product Status Not For New Designs Memory Type Non-Volatile Technology FLASH - NOR Memory Interface Parallel Write Cycle Time - Word, Page......
Shenzhen Huahao Gaosheng Technology Co., Ltd
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SST39SF040-70-4C-WHE-T
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FLASH Memory IC 4Mbit Parallel 70 ns 32-TSOP...
ALIXIN STOCK (HONG KONG) CO., LIMITED
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CY62157EV30LL-45BVXI Electronic IC Chips 8-Mbit (512K x 16) Static RAM
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CY62157EV30 MoBL® 8-Mbit (512K x 16) Static RAM Features • TSOP I package configurable as 512K x 16 or as 1M x 8 SRAM • High speed: 45 ns • Wide voltage range: 2.20V–3.60V • Pin compatible with CY62157DV30 • Ultra low standby power — Typical Standby ......
ChongMing Group (HK) Int'l Co., Ltd
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CY62157EV30LL-45BVXI Electronic IC Chips 8-Mbit (512K x 16) Static RAM
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CY62157EV30 MoBL® 8-Mbit (512K x 16) Static RAM Features • TSOP I package configurable as 512K x 16 or as 1M x 8 SRAM • High speed: 45 ns • Wide voltage range: 2.20V–3.60V • Pin compatible with CY62157DV30 • Ultra low standby power — Typical Standby ......
Anterwell Technology Ltd.
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