Low RDS On Silicon Carbide MOSFET Multipurpose For Motor Driver
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... · Solar inverter · Power factor correction · Data Center · Switch mode power supply Benefits · High-speed switching · Low heat dissipation requirements · Reduce size and cost of the system · High-reliability ·...
Guangdong Lingxun Microelectronics Co., Ltd
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Converter Silicon Carbide MOSFET Durable Multi Function Low On Resistance
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Low On Resistance Silicon Carbide MOSFET Device for Etc. Applications *, *::before, *::after {box-sizing: border-box; } * {margin: 0; } html, body {height: 100%; } body {line-height: 1.5; -webkit-font-smoothing: antialiased; } img, picture, video, canvas, ......
Reasunos Semiconductor Technology Co., Ltd.
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Transistors SCTW100N65G2AG Automotive-Grade Silicon Carbide MOSFET 650V 100A 20mOhm
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...Silicon Carbide MOSFET 650V 100A 20mOhm Product Description Of SCTW100N65G2AG SCTW100N65G2AG Automotive-grade silicon carbide Power MOSFET 650 V, 100 A, 20 mΩ (typ., TJ = 25 °C), in an HiP247 package. Specification Of SCTW100N65G2AG Part Number SCTW100N65G2AG Drain to Source Voltage (Vdss) 650 V Current - Continuous Drain (Id) @ 25°C 100A (Tc) Drive Voltage (Max Rds On, Min Rds On) 18V Rds......
ShenZhen Mingjiada Electronics Co.,Ltd.
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IGBT Power Module FMH23N50E - Fuji Electric - N-CHANNEL SILICON POWER MOSFET
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...power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate ......
Mega Source Elec.Limited
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IRFR120NTRLPBF Common Power Mosfet High Performance And Low RDS(On)
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This listing is for one IRFR120NTRLPBF MOSFET Power Electronics. This is an N-channel enhancement mode silicon gate power field effect transistor. Features of the IRFR120NTRLPBF include: • Drain-Source Voltage: 60V • Continuous Drain Current: -11A • Power ......
Shenzhen Sai Collie Technology Co., Ltd.
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BSS138K N Channel 0.35W 0.22A Silicon Power MOSFET
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BSS138K N-Channel Enhancement Mode Power MOSFET FEATURES 1. VDS = 50V,ID = 0.22A RDS(ON) < 3Ω @ VGS=5V RDS(ON) < 2Ω @ VGS=10V ESD Rating:HBM 2300V 2. High power and current handing capability 3. Lead free product is acquired 4. Surface mount package ......
Guangdong Huixin Electronics Technology Co., Ltd.
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Fuji N-Channel NPN PNP Transistors FMH23N50E Silicon Power Mosfet 23a 500v
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... N-Channel FMH23N50E Silicon Power Mosfet 23a 500v Dc-Dc Converters Power Supply Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Features Maintains both low power loss and low noise Lower RDS(on) characteristic More ......
Shenzhen Retechip Electronics Co., Ltd
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2inch 3inch Dia100m 4H-N Type Silicon Carbide Wafer Production Grade For Semiconductor Device
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...Silicon Carbide substrates for semiconductor device, Application areas 1 high frequency and high power electronic devices Schottky diodes, JFET, BJT, PiN, diodes, IGBT, MOSFET 2 optoelectronic devices: mainly used in GaN/SiC blue LED substrate material (GaN/SiC) LED Advantagement • Low lattice mismatch • High thermal conductivity • Low......
SHANGHAI FAMOUS TRADE CO.,LTD
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IMZ120R090M1H INFINEON N Channel Mosfet Diode 1200 V 26A Tc 115W Tc Hrough Hole PG-TO247-4-1
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... Type N-Channel Technology SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss) 1200 V Current - Continuous Drain (Id) @ 25°C 26A (Tc) Drive Voltage (Max Rds On, Min Rds On) 15V, 18V Rds On (Max) @ Id, Vgs 117mOhm @ 8.5A, 18V Vgs(th) (Max)...
Shenzhen Zhaocun Electronics Co., Ltd.
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FDMS6681Z P Channel Mosfet Driver Circuit , Power Switching Transistor PowerTrench
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... combination for low rDS(on) HBM ESD Protection Level of 8kV Typical(Note 3) MSL1 Robust Package Design RoHS Compliant General Description The FDMS6681Z has been designed to minimize losses in load switch applications. Advancements in both silicon and...
ChongMing Group (HK) Int'l Co., Ltd
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