RoHS Other Electronic Components 6 PIN LSI1012LT1G Transistor Mosfet Diode
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Original New Transistor Mosfet DiodesSOT-23(SOT-23-3) LSI1012LT1G Products Description: 1. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP ......
Shenzhen Res Electronics Limited
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MBR30100CT N-Channel Transistor Mosfet Diode Array 600V 15A To247 MBRF30100CT
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ShenZhen QingFengYuan Technology Co.,Ltd.
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SS36 SMB Schottky Barrier Rectifier Diodes Transistors MOSFET Bridge Rectifier IC
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...SMB Surface Mounted Schottky Barrier Rectifier Diode Transistors MOSFET Bridge rectifiers electronic component Name: 3A SS32 SS33 SS34 SS35 SS36 SS39 SS310 SS315 SS320 SMA/DO-214AC package SMD Schottky barrier Rectifier Diode Model No.: SS32 SS33 SS34 SS35......
Angel Technology Electronics Co
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12V Si MOSFET Diode Transistor Chips IRLML6401TRPBF
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...: Si Mounting Style: SMD/SMT Package / Case: SOT-23-3 Transistor Polarity: P-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 12 V Id - Continuous Drain Current: 4.3 A ......
Hong Kong Jia Li Xin Technology Limited
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3 Pin 90V Diode Electronic Component 2N6661JANTX Transistor MOSFET N-Channel 0.86A TO-205AD
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2N6661JANTX Transistor MOSFET N-Channel 90V 0.86A 3-Pin TO-205AD Shipping: 1, We can shipping all over the world by DHL, UPS, FEdex, TNT . The packaging is very safe and strong. Please nitfy me you have any special needs 2, It will take around 3-5 days to ......
J&T ELECTRONICS LTD
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Original High Voltage Mosfet Transistor , Mosfet Driver Using Transistor
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..., as we can see in the following figure. Thus the device is also called as the V-MOSFET or V-FET. The V- the shape of power MOSFET is cut to penetrate from the device surface is almost to the N+ substrate to the N+, P, and N – layers. The N+ layer is the...
Shenzhen Hua Xuan Yang Electronics Co.,Ltd
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Original High Voltage Mosfet Power Transistor Mosfet Driver Using Transistor
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..., as we can see in the following figure. Thus the device is also called as the V-MOSFET or V-FET. The V- the shape of power MOSFET is cut to penetrate from the device surface is almost to the N+ substrate to the N+, P, and N – layers. The N+ layer is the...
Beijing Silk Road Enterprise Management Services Co.,LTD
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D2085UK 28V120W 1MHz-1000MHz Push-pull RF Power Transistor MOSFET
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...TRANSISTOR MOSFET Manufacturer: TT Electronics Product Category: TT Electronics Brand: Semelab / TT Electronics The D2085UK is a push-pull RF power transistor MOSFET that operates at a voltage of 28V and can handle a power output of 120W. It is designed for use in the frequency range of 1MHz to 1000MHz. Silicon MOSFET: MRF140: RF MOSFET......
Wisdtech Technology Co.,Limited
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MMSZ5241BT1G Mosfet Power Transistor Zener Diodes 11V 500mW
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MMSZ5241BT1G Mosfet Power Transistor Zener Diodes 11V 500mW Features • 500 mW Rating on FR−4 or FR−5 Board • Wide Zener Reverse Voltage Range − 2.4 V to 110 V @ ......
ChongMing Group (HK) Int'l Co., Ltd
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LCR-T4 Mega328 Transistor Tester Diode Resistor Capacitor Tester ESR Meter
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... time: only 1.7 seconds. It is normal to take 1 minute for bulk capacitor detection 3. Automatic detection of NPN and PNP transistors, N-channel and P-channel MOSFET, diodes, triodes, resistors, capacitors or other devices 4. Use 9V battery(not included),...
Oky Newstar Technology Co., Ltd
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