MRF175LU MA Transistor RF MOSFET 100W 400MHz Rf Power Field Effect Transistor
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MRF175LU N/A Electronic Components IC MCU Microcontroller Integrated Circuits MRF175LU #detail_decorate_root .magic-0{border-bottom-style:solid;border-bottom-color:#53647a;font-family:Roboto;font-size:24px;color:#53647a;font-style:normal;border-bottom-......
Shenzhen Kaigeng Technology Co., Ltd.
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MRF175LU
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... Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online ......
Beijing Silk Road Enterprise Management Services Co.,LTD
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PIMN31 NPN / PNP Resistor Equipped Transistor 500 MA 50V Dual Gate Transistor
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... (SC-74) Surface-Mounted Device (SMD) plastic package. 1.2 Features I 500 mA output current capability I Built-in bias resistors I Simplifies circuit design I Reduces component count I Reduces pick and ......
DELI ELECTRONICS TECHNOLOGY CO.,LTD
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MRF175LU
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RF Mosfet 28 V 100 mA 400MHz 10dB 100W 333-04, Style 2...
Beijing Silk Road Enterprise Management Services Co.,LTD
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2SC3356- T1B NPN Silicon RF Power Mosfet Transistor 100 mA Collector Current
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... RF Power Mosfet Transistor 100 mA Collector Current FEATURES • Low noise and high gain : NF = 1.1 dB TYP., Ga = 11 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1 GHz • High power gain : MAG = 13 dB TYP. @ VCE = 10 V, IC = 20 mA, f = 1 GHz ABSOLUTE MAXIMUM......
Anterwell Technology Ltd.
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A92 High Current NPN Transistor , High Power NPN Silicon Transistor
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...Transistors A92 TRANSISTOR (NPN) FEATURE Low Collector-Emitter Saturation Voltage High Breakdown Voltage Marking :A92 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -310 V VCEO Collector-Emitter Voltage -305 V VEBO Emitter-Base Voltage -5 V IC Collector Current- Continuous -200 mA ICM Collector Current -Pulsed -500 mA......
Shenzhen Hua Xuan Yang Electronics Co.,Ltd
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600mA Silicon Power Transistor NPN Power Transistor High Current
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...Transistors A42 TRANSISTOR (NPN) FEATURE Low Collector-Emitter Saturation Voltage High Breakdown Voltage Marking :D965A MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 310 V VCEO Collector-Emitter Voltage 305 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 200 mA ICM Collector Current -Pulsed 500 mA......
Beijing Silk Road Enterprise Management Services Co.,LTD
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MMUN2233LT1G Pre Biased NPN Bipolar Transistor 50V 100 MA 246mW SOT-23-3
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...Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 246 mW Surface Mount SOT-23-3 (TO-236) Category Discrete Semiconductor Products Transistors Bipolar (BJT) Single, Pre-Biased Bipolar Transistors Mfr onsemi Series - Product Status Active Transistor Type NPN - Pre-Biased Current - Collector (Ic) (Max) 100 mA......
Shenzhen Xinyuanpeng Technology Co., Ltd.
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P Channel MOSFET FDG6321C Diode Transistor Chips Integrated Circuits
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...Transistor Integrated Circuits PRODUCT DESCRIPTION MOSFET SC70-6 COMP N-P-CH PRODUCT PROPERTIES Manufacturer: onsemi Product Category: MOSFET Technology: Si Mounting Style: SMD/SMT Package / Case: SOT-323-6 Transistor Polarity: N-Channel, P-Channel Number of Channels: 2 Channel Vds - Drain-Source Breakdown Voltage: 25 V Id - Continuous Drain Current: 500 mA, 410 mA......
Hong Kong Jia Li Xin Technology Limited
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QY70 Mitsubishi Universal Q CPU module 16 point transistor, 5-12 VDC, 16 mA/point, 256 mA/common, sink type, 16 points
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...point transistor, 5-12 VDC, 16 mA/point, 256 mA/common, sink type, 16 points Part Number: QY70 Type: Digital Output Module Manufacturer: Mitsubishi PLC Series: Q Series Our part number: QY70 Description: 16 point transistor, 5-12 VDC, 16 mA/point, 256 mA/......
Shenzhen Hunt Electronics Co., Ltd
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