Multiscene Low Voltage N Channel MOSFET For Power Management
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Multiscene Low Voltage MOSFET N Channel For Power Management *, *::before, *::after {box-sizing: border-box;}* {margin: 0;}html, body {height: 100%;}body {line-height: 1.5;-webkit-font-smoothing: antialiased;}img, picture, video, canvas, svg {display: ......
Guangdong Lingxun Microelectronics Co., Ltd
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Motor Driver Low Gate Voltage Mosfet , Multiscene Low Vgs N Channel Mosfet
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Low Gate Voltage MOSFET with Reliable and High EAS Capability *, *::before, *::after {box-sizing: border-box; } * {margin: 0; } html, body {height: 100%; } body {line-height: 1.5; -webkit-font-smoothing: antialiased; } img, picture, video, canvas, svg {......
Reasunos Semiconductor Technology Co., Ltd.
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STL150N3LLH5 N-CH MOSFET IC 30V 195A POWERFLAT N P Channel Mosfet
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... MOSFET N-CH 30V 195A POWERFLAT N P Channel Mosfet Manufacturer: STMicroelectronics Product Category: MOSFET RoHS: Details Technology: Si Mounting Style: SMD/SMT Package / Case: PowerFLAT-5x6-8 Transistor Polarity: N-Channel Number of Channels: 1 Channel ......
Wisdtech Technology Co.,Limited
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OEM N Channel Mosfet Transistor , Small Mosfet Power Switch Enhancement Mode
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...Channel Mosfet Transistor , Small Mosfet Power Switch Enhancement Mode N Channel Mosfet Transistor DESCRIPTION The UTC 12N60-C is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications of switching power supplies and adaptors. N Channel Mosfet...
Shenzhen Hua Xuan Yang Electronics Co.,Ltd
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IRFP2907PBF High-Performance N-Channel MOSFET for Power Electronics Applications
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...Channel MOSFET for Power Electronics Applications IRFP2907PBF MOSFET This MOSFET is a high power, low-voltage N-Channel MOSFET with a drain-source voltage of 100V and a drain current of 19A. It has a fast switching speed and a low gate-source threshold voltage. It also has good thermal stability, excellent frequency performance, and a robust package. This MOSFET......
Shenzhen Sai Collie Technology Co., Ltd.
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200v N Channel Mosfet Transistor Surface Mount IRF640NSTRLPBF
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...CHANNEL MOSFET TRANSISTOR 200V SURFACE MOUNT D2PAK Goods Condition: Brand New Part Status: Active Lead Free / Rohs: Complaint Function: Mosfet Mounting Type: Surface Mount Package: D2PAK High Light: high power mosfet transistors , n channel mosfet transistor IRF640NSTRLPBF N-Channel Mosfet......
Shenzhen Huahao Gaosheng Technology Co., Ltd
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IRFP260NPBF Mosfet Power Transistor 64-6005PBF N- Channel MOSFET 200V 50A 300W Through Hole TO-247AC
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...Channel MOSFET 200V 50A 300W Through Hole TO-247AC RoHS Compliant Other Name:64-6005PBF Feature l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements l Lead-Free FET Type N-Channel Technology MOSFET......
Shenzhen Koben Electronics Co., Ltd.
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Ultra Low On-Resistance HEXFET Power MOSFET P-Channel MOSFET SOT-23 Footprint Fast Switching IRLML6402TRPBF
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...MOSFET T ♦Ultra Low On-Resistance ♦P-Channel MOSFET ♦SOT-23 Footprint ♦Low Profile (<1.1mm) ♦Available in Tape and Reel ♦Fast Switching These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFETs......
Anterwell Technology Ltd.
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NTMFS4833NT1G Transistor N Channel Mosfet 30v 5 Pin 16A 156A
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... N-channel MOSFET Transistor; 191 A; 30 V; 8-Pin SO-8FL 3. Trans MOSFET N-CH 30V 28A 8-Pin SO-FL T/R Technological Parameters: Polarity N - Channel Dissipated power 125 W Threshold voltage 1.5 V input capacitor 5600pF @12V Drain-source voltage 30 V...
Shenzhen Res Electronics Limited
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RoHS Dual N Channel Mosfet Power Transistor SOT-23-6L MOSFETS 6.0 A VDSS
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...23-6L Plastic-Encapsulate MOSFETS Dual N-Channel MOSFET General Description VDSS= V ID= 6.0 A z 20 G1 6 D1,D2 5 G2 4 z RDS(on) < Ω@V = 4.5V 25m GS z RDS(on) < Ω@V = 2.5V 32m GS 1 2 3 S1 D1,D2 S2 FEATURE z TrenchFET Power MOSFET z Excellent RDS(on) z Low ......
Beijing Silk Road Enterprise Management Services Co.,LTD
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