High Frequency N Channel Enhancement Mode Power IGBT 40A 650V For PFC
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...Channel Enhancement Mode Power IGBT For PFC MAIN CHARACTERISTICS Ic(A):40A Vces(V):650V VGES(V):±20 TRR(nS):33nS FEATURES • Trench and field-stop technology • Easy parallel switching capability APPLICATIONS • PFC applications • Uninterruptible power......
Guangdong Lingxun Microelectronics Co., Ltd
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Automotive IGBT Modules CAB650M17HM3 1.7kV 916A SiC Dual Channel Power Module
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Automotive IGBT Modules CAB650M17HM3 1.7kV 916A SiC Dual Channel Power Module [MJD Advantage] + 15 years experience for electronic components + Secure Ordering + Excellent Feedback + Delivery Date Guaranteed + 100% Low Price Guaranteed + Export to 108 ......
ShenZhen Mingjiada Electronics Co.,Ltd.
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Charging Pile High Power IGBT Transistor Multipurpose For OBC
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...Power IGBT High Power Insulated Gate Bipolar Transistor (IGBT) is a high voltage device used in many applications, such as on-board chargers, welding machines, switching power supplies, photovoltaic inverters, energy storage, and more. With a current density of 400A/cm² and a faster switching speed, High Power IGBT offers a reliable and efficient solution for these applications. High Power IGBT......
Reasunos Semiconductor Technology Co., Ltd.
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ISL9V3040S3ST Power Mosfet Transistor N-Channel Ignition IGBT Transistor
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...ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3 EcoSPARKTM 300mJ, 400V, N-Channel Ignition IGBT General Description The ISL9V3040D3S, ISL9V3040S3S, ISL9V3040P3, and ISL9V3040S3 are the next generation ignition IGBTs that offer outstanding SCIS capability in the ......
Anterwell Technology Ltd.
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Toshiba High Power IGBT Module High Speed MG200Q1US51 Transistor Module
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...IGBT Power Module MG200Q1US51 Transistor Module MG200Q1US51 Product Description Manufactured by: Toshiba America, Inc. Part number: MG200Q1US51 Part Category: Transistors Description: 300A, 1200V, N-CHANNEL IGBT Collector-Emitter Voltage: 1200V Gate-Emitter Voltage: 20V Collector Current (DC): 300A Forward Current: (DC): 200A Collector Power......
Guangzhou Sande Electric Co.,Ltd.
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IR21094STRPBF SOP14 N Channel Power MOSFET IGBT Drivers
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IR21094STRPBF high voltage, high speed power MOSFET and IGBT drivers Description The IR2109(4)(S) are high voltage, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS......
Shenzhen ATFU Electronics Technology ltd
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High Power MOSFET NVTFS4C02N MOSFET Single N-Channel Power N-Channel µ8FL 30V 162A 2.25 mΩ
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...Power MOSFET NVTFS4C02N MOSFET Single N-Channel Power N-Channel µ8FL 30V 162A 2.25 mΩ [Who we are?] Sunbeam Electronics (Hong Kong) Co. Ltd is focus on semi-conductors sourcing and electronic components sale and service for clients over 10 years, specialize in selling the new and unused, original factory sealed packing electronic components. specialize in IC,MCU,Memory,Module,diode,transistor,IGBT......
Sunbeam Electronics (Hong Kong) Limited
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FF300R12KE4 High Power Igbt Module
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... Power Igbt Module N-CH 1200V 460A IGBT Inverter IGBT Modules Applications Motor control and drives Uninterruptible Power Supplies (UPS) Specifications Product Attribute Attribute Value Manufacturer: Infineon Product Category: IGBT Modules Product: IGBT ......
Shenzhen Retechip Electronics Co., Ltd
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IRG4BC30UDPBF High Power IGBT Module With Low Loss And High Efficiency
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..., high-efficiency applications. It offers high-speed switching with low losses, and is well-suited for applications such as AC motor drives, uninterruptible power supplies (UPS), welding equipment, and power supplies....
Shenzhen Sai Collie Technology Co., Ltd.
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XL350 2 Channel Power Amplifier Professional With Balanced / Unbalanced Input Impedance
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...sources, such as a preamplifier, mixer, or audio interface. Each channel of the amplifier takes a low-level input signal and increases its power level to drive speakers or other audio devices. Power Output: A 2-channel power amplifier provides power to two...
Foshan Subole Electronic Technology Co., Ltd.
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