1200V 400A N Channel 1.2KV SKM IGBT Module SKM400GB128D
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Product Detail Product Information Transistor Polarity: N Channel DC Collector Current: 520A Collector Emitter Saturation Voltage Vce(on):1.2kV Collector Emitter Voltage V(br)ceo:1.2kV Transistor Case Style:SEMITRANS 3 No. of Pins:7Pins Operating ......
Shenzhen Quanyuantong Electronics Co., Ltd.
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194W Trench Field Stop Dual IGBT Modules 3 Channel NXH300B100H4Q2F2PG
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... This high−density, integrated power module combines high−performance IGBTs with 1200 V SiC diode. Specification Of NXH300B100H4Q2F2PG Part Number NXH300B100H4Q2F2PG IGBT Type Trench Field Stop Configuration Dual, Common Source Voltage -...
ShenZhen Mingjiada Electronics Co.,Ltd.
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MG100Q2YS65H TOSHIBA IGBT Module Silicon N Channel IGBT FUJITSU IGBT Power Module
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...IGBT Module Silicon N Channel IGBT. Part NO: MG100Q2YS65H Brand: FUJITSU Date Code: 05+ Quality Warranty: 3 Months Mounting Type: Screws Overview We specialize in high power and power conversion modules of famous brands Categories include: Darlington Schottky, rectifier intelligent, IGBT, IPM, GTR, DC-DC, AC-DC rectifier and power supply and other modules......
Mega Source Elec.Limited
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Intelligent Silicon N Channel Lgbt Power Module IC MIG30J103H Electronics
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...Channel Lgbt Power Module IC MIG30J103H Electronics MIG30J103H Intelligent Power Module Silicon N Channel Lgbt MOTOR CONTROL APPLICATIONS Intelligent Power Module that include IGBT drive circuits, overcurrent, undervoltage lockout, and overtemperature protection. The Electrodes are Isolated from Case High speed type IGBT......
Anterwell Technology Ltd.
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Toshiba High Power IGBT Module High Speed MG200Q1US51 Transistor Module
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Toshiba IGBT Power Module MG200Q1US51 Transistor Module MG200Q1US51 Product Description Manufactured by: Toshiba America, Inc. Part number: MG200Q1US51 Part Category: Transistors Description: 300A, 1200V, N-CHANNEL IGBT Collector-Emitter Voltage: 1200V ......
Guangzhou Sande Electric Co.,Ltd.
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200W IGBT Module Driver Circuit I2C TLA2022IRUGR Texas Instruments
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IGBT Power Module Texas Instruments/TI TLA2022IRUGR Resolution (Bits) 12 Number of input channels 1 Sample rate (Max) (kSPS) 3.3 Interface type I2C Architecture Delta-Sigma Input type Differential, Single-Ended Multi-channel configuration — Rating ......
Yingxinyuan Int'l(Group) Ltd.
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SIHF12N50CE3 MOSFET Power Electronics High Voltage Fast Switching IGBT Module
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Product Name: SIHF12N50CE3 Manufacturer: Vishay Siliconix Description: N-Channel 500V (D-S) 175·C MOSFET Package Type: TO-263-3(D2PAK) RoHS Compliant: Yes Maximum Drain-Source Voltage (VDS): 500VMaximum Continuous Drain Current (ID): 12A Maximum Power ......
Shenzhen Sai Collie Technology Co., Ltd.
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Half Bridge IGBT Power Module SKM100GB125DN 75A 1200V Ultra Fast
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SKM100GB125DN, SKM100GB125DN, SKM100GB125DN, SKM100GB125DN, SKM100GB125DN, SKM100GB125 DN, SKM100 GB125DN, SKM100GB125DN, SKM100GB125DN Applications • Switched mode power supplies at fsw > 20 kHz • Resonant inverters up to 100 kHz • Inductive heating • ......
Shenzhen Retechip Electronics Co., Ltd
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BSM50GP120 IGBT Power Module Chassis / Screw Mount 1200V 50A N Channel Type
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...IGBT Module Chassis Mount Module IGBT MODULE 1200V 50A Trans IGBT Module N-CH 1.2kV 50A nom 360W 24-Pin EconoPIM3 122x62mm Value Channel Type N Configuration Hex Maximum Collector Emitter Voltage 1200 V Maximum Continuous Collector Current 80 A Maximum Gate Emitter Voltage ±20 V Mounting Screw Mount Pin Count 24 Product Dimensions 122 x 62 x 17 mm Supplier Package EconoPIM3 Description 1. IGBT......
DELI ELECTRONICS TECHNOLOGY CO.,LTD
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200W IGBT Gate Driver Module I2C TLA2022IRUGR Texas Instruments
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... rate (Max) (kSPS) 3.3 Interface type I2C Architecture Delta-Sigma Input type Differential, Single-Ended Multi-channel configuration — Rating Catalog Reference mode Int Input range (Max) (V) 5.5 Input range (Min) (V) 0 Features Oscillator,...
Guangzhou Topfast Technology Co., Ltd.
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