Power Discrete Devices Supper Junction MOSFET For LED Driver
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... and lower power dissipation. This means that your devices will run more efficiently, saving you energy and reducing the risk of overheating or other issues. In addition to its high performance, the Super Junction MOSFET also offers a large EMI margin,...
Guangdong Lingxun Microelectronics Co., Ltd
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IRFBE30PBF MOSFET Power Electronics 30V N-channel MOSFET Silicon Material
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...MOSFET Power Electronics 30V N-Channel MOSFET Silicon Material Product Description: The IRFBE30PBF is a high-performance N-channel MOSFET designed for maximum efficiency in a wide range of applications. It features a low on-state resistance, low gate charge, and a fast switching capability. With a maximum drain current of 30A, this device is ideal for use in power......
Shenzhen Sai Collie Technology Co., Ltd.
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IRFB4227PBF TO-220 Discrete Semiconductor Devices , N Channel Mosfet 200V 65A
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IRFB4227PBF TO-220 N-channel 200V/65A in-line MOSFET Brand New and original Integrated Circuit chip PRODUCT DESCRIPTION Part number IRFB4227PBF is manufactured by INFINEON and distributed by Stjk. As one of the leading distributors of electronic products......
STJK(HK) ELECTRONICS CO.,LIMITED
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Through Hole High Power Transistor , AOTF14N50 N Channel Mosfet N-CH 500V 14A TO220F
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Part Number: AOTF14N50 Description: MOSFET N-CH 500V 14A TO220F Category: Discrete Semiconductor Products>>FETs - Single Packaging:Tube FET Type:N-Channel Technology:MOSFET (Metal Oxide) Drain to Source Voltage (Vdss):500V Current - Continuous Drain (Id......
DELI ELECTRONICS TECHNOLOGY CO.,LTD
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BTS282Z E3230 TO220-7 N Channel MOSFET 49V 80A Transistors FETs
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Product Description BTS282Z E3230 TO220-7 N-Channel MOSFET 49V 80A Transistors FETs BTS282ZE3230AKSA2 power MOSFET from Infineon Technologies. Its maximum power dissipation is 300000 mW. In order to ensure parts aren't damaged by bulk packaging, this ......
Guangzhou Topfast Technology Co., Ltd.
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Enhancement Mode N Channel Mosfet Power Transistor Low Voltage 100V
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...Channel Mosfet Power Transistor Low Voltage 100V N Channel Mosfet Power Working and Characteristics The construction of the power MOSFET is in V-configurations, as we can see in the following figure. Thus the device is also called as the V-MOSFET or V-FET. The V- the shape of power MOSFET is cut to penetrate from the device......
Shenzhen Hua Xuan Yang Electronics Co.,Ltd
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BTS282Z E3230 TO220-7 N-Channel MOSFET 49V 80A Transistors FETs
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BTS282Z E3230 TO220-7 N-Channel MOSFET 49V 80A Transistors FETs BTS282ZE3230AKSA2 power MOSFET from Infineon Technologies. Its maximum power dissipation is 300000 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube......
Angel Technology Electronics Co
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IPB018N10N5ATMA1 Semiconductor Discrete Devices PG-TO263-3 MOSFET
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Discrete Semiconductors IPB018N10N5ATMA1 PG-TO263-3 MOSFET Product Description: MOSFET OptiMOSTM5Power-Transistor,100V Features: •Idealforhighfrequencyswitchingandsync.rec. •N-channel,normallevel •OptimizedforFOMOSS •Verylowon-resistanceRDS(on) •175°......
Shenzhen Zhongkaixin Micro Electronics Co., Ltd.
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N- Channel Mosfet Power Transistor 55V 110A 200W Through Hole TO-220AB IRF3205PBF
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...Channel MOSFET 55V 110A 200W Through Hole TO-220AB Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device......
Shenzhen Koben Electronics Co., Ltd.
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Ultra Low On-Resistance HEXFET Power MOSFET P-Channel MOSFET SOT-23 Footprint Fast Switching IRLML6402TRPBF
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...Power MOSFET T ♦Ultra Low On-Resistance ♦P-Channel MOSFET ♦SOT-23 Footprint ♦Low Profile (<1.1mm) ♦Available in Tape and Reel ♦Fast Switching These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFETs......
Anterwell Technology Ltd.
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