Power Discrete Devices Low On Resistance SJ MOS For Lighting
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Power Discrete Devices Super Junction MOSFET Low On Resistance SJ MOS For Lighting Product Description: One of the key advantages of the Super Junction MOSFET is its large EMI margin, making it an ideal choice for applications where electromagnetic interference is a concern. With its advanced Super-Junction technology, this MOSFET......
Guangdong Lingxun Microelectronics Co., Ltd
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Power Supply Super Junction MOSFET Surface Mount Multi Function
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Ultra-low Junction Capacitance Power Discrete Devices Super Junction MOSFET/SJ MOSTET *, *::before, *::after {box-sizing: border-box; } * {margin: 0; } html, body {height: 100%; } body {line-height: 1.5; -webkit-font-......
Reasunos Semiconductor Technology Co., Ltd.
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IPB018N10N5ATMA1 Semiconductor Discrete Devices PG-TO263-3 MOSFET
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Discrete Semiconductors IPB018N10N5ATMA1 PG-TO263-3 MOSFET Product Description: MOSFET OptiMOSTM5Power-Transistor,100V Features: •Idealforhighfrequencyswitchingandsync.rec. •N-channel,normallevel •OptimizedforFOMOSS •Verylowon-resistanceRDS(on) •175°......
Shenzhen Zhongkaixin Micro Electronics Co., Ltd.
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MOSFET Power Electronics FDBL0200N100 High-Current High-Voltage High-Speed Low-Loss Power Switching Device
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MOSFET Power Electronics FDBL0200N100 High-Current High-Voltage High-Speed Low-Loss Power Switching Device Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100 V Current - Continuous Drain (Id) @ 25°C 300A (Tc) Drive Voltage (Max Rds On, Min ......
Shenzhen Sai Collie Technology Co., Ltd.
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IGBT CoolMOS Power Discrete Semiconductor SPW35N60C3 Transistor Mosfet IGBT N-Ch 650V 34.6A
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Product Range IGBT CoolMOS Discrete Semiconductors SPW35N60C3 MOSFET N-Ch 650V 34.6A TO247-3 App Characteristics New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Extreme dv /dt rated Ultra low effective capacitances ......
KZ TECHNOLOGY (HONGKONG) LIMITED
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06N90E FMV06N90E FMH06N90E Semiconductor Discrete Devices 900V 6A
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Product Description 06N90E FMV06N90E FMH06N90E Mosfet 900V 6A TO 220F Electronic components 06N90E FMV06N90E FMH06N90E Mosfet 900V 6A TO 220F Product Technical Specifications Part number FMV06N90E FMH06N90E Base part number 06N90E EU RoHS Compliant with ......
Guangzhou Topfast Technology Co., Ltd.
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Automotive IGBT Modules MSCMC90AM12C3AG Mosfet Array 900V 110A Power Discrete Module
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Automotive IGBT Modules MSCMC90AM12C3AG Mosfet Array 900V 110A Power Discrete Module [MJD Advantage] + 15 years experience for electronic components + Secure Ordering + Excellent Feedback + Delivery Date Guaranteed + ......
ShenZhen Mingjiada Electronics Co.,Ltd.
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LM3429MH/NOPB LM3429MHX/NOPB Power Semiconductor Devices LED Driver IC
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... LM3429MHX/NOPB Power Semiconductor Devices LED Driver IC 1 Features ·LM3429-Q1 is AEC-Q100 Grade 1 Qualified for Automotive Applications VRange From 4.5V to 75 V Adjustable Current Sense Voltage High-Side Current Sensing 2-Ω, 1-A Peak MosFET Gate Driver......
HONG KONG KEEP BOOMING TECHNOLOGY CO.,LIMITED
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AOD464 Small Audio Power Transistors / N Channel Mosfet Transistor
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AOD464 N-Channel Enhancement Mode Field Effect Transistor General Description The AOD464 uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. This device is suitable for use in high voltage synchronous ......
Shenzhen Hua Xuan Yang Electronics Co.,Ltd
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Superfet 3 Audio Power Transistors , 650V NVHL040N65S3F High Power Mosfet Transistors
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... to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is...
Shenzhen Weitaixu Capacitor Co.,Ltd
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