Power Discrete Devices Super Junction MOSFET For Compact Fluorescent Lamps
|
...t it can handle the toughest working conditions with ease. This makes it an incredibly reliable and rugged device that you can count on to perform well over time. Another standout feature of the Super Junction MOSFET is its much lower Ron*A performance,...
Guangdong Lingxun Microelectronics Co., Ltd
|
Power Supply Super Junction MOSFET Surface Mount Multi Function
|
Ultra-low Junction Capacitance Power Discrete Devices Super Junction MOSFET/SJ MOSTET *, *::before, *::after {box-sizing: border-box; } * {margin: 0; } html, body {height: 100%; } body {line-height: 1.5; -webkit-......
Reasunos Semiconductor Technology Co., Ltd.
|
IRF5801TRPBF Mosfet In Power Electronics High Performance Low Cost
|
... range of applications. The device features a maximum drain source voltage of 100V, a maximum drain current of 15.8A, and a maximum power dissipation of 240W. The device also offers a maximum junction temperature of 175℃, an excellent RDS(on) of 1.4mΩ,...
Shenzhen Sai Collie Technology Co., Ltd.
|
Superfet 3 Audio Power Transistors , 650V NVHL040N65S3F High Power Mosfet Transistors
|
... to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is...
Shenzhen Weitaixu Capacitor Co.,Ltd
|
Infineon HEXFET Power MOSFET N Channel 55V 30A DPAK IRLR3915TRPBF
|
...MOSFET N-Channel 55V 30A DPAK Discrete Semiconductor Products N-Channel 55 V 30A (Tc) 120W (Tc) Surface Mount D-Pak Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this product are a 175°C junction......
Angel Technology Electronics Co
|
N Channel Transistor Discrete Semiconductor Devices SIHF10N40D-E3 Power Mosfets
|
Product Technical Specifications N Channel Transistor Discrete Semiconductors SIHF10N40D-E3 Power Mosfets EU RoHS Compliant ECCN (US) EAR99 Part Status Active HTS 8541.29.00.95 Automotive No PPAP No Product Category Power MOSFET Configuration Single ......
Guangzhou Topfast Technology Co., Ltd.
|
TK10P60W Power Mosfet Transistor MOSFETs Silicon N-Channel MOS
|
MOSFETs Silicon N-Channel MOS (DTMOS) TK10P60W Applications • Switching Voltage Regulators Features (1) Low drain-source on-resistance: RDS(ON) = 0.327 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement......
Anterwell Technology Ltd.
|
SLH60R080SS MOSFET 600V47A N-Channne TO-247 FET New Original 68mΩ 290W
|
...Power MOSFET is produced using Maple semi‘s Advanced Super-Junction technology. This advanced technology has been especially tailored to minimize conduction loss, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for AC/DC power......
KZ TECHNOLOGY (HONGKONG) LIMITED
|
HXY4409 30V P-Channel MOSFET
|
...given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C....
Shenzhen Hua Xuan Yang Electronics Co.,Ltd
|
APT77N60JC3 IGBT Power Moudle
|
APT77N60JC3 is a Super Junction MOSFET Why Chose Mega Source ? Quality At the heart of Mega Source Elec. lies a commitment to total customer satisfaction with a secure quality system .With advanced equipment and experienced industry experts, Mega Source ......
Mega Source Elec.Limited
|