4N-Channel Mosfet Array MSCSM170HM23CT3AG Full Bridge SiC MOSFET Power Module 602W
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...Mosfet Array MSCSM170HM23CT3AG Full Bridge SiC MOSFET Power Module 602W Product Description Of MSCSM170HM23CT3AG MSCSM170HM23CT3AG is Full Bridge SiC MOSFET Power Module, 1700 V, 124 A silicon carbide (SiC) Mosfet Array module. Specification Of MSCSM170HM23CT3AG Part Number MSCSM170HM23CT3AG Technology Silicon Carbide (SiC......
ShenZhen Mingjiada Electronics Co.,Ltd.
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High Power MOSFET NVH4L022N120M3S SiC MOSFET 1200 V 22 mohm M3S Series in TO247-4LD package
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High Power MOSFET NVH4L022N120M3S SiC MOSFET 1200 V 22 mohm M3S Series in TO247-4LD package [Who we are?] Sunbeam Electronics (Hong Kong) Co. Ltd is focus on semi-conductors ......
Sunbeam Electronics (Hong Kong) Limited
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Ultra Low Resistance SiC Mosfet High Efficiencys For Renewable Energy Systems
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Ultra Low Resistance SiC Mosfet High Efficiencys For Renewable Energy Systems *, *::before, *::after {box-sizing: border-box;}* {margin: 0;}html, body {height: 100%;}body {line-height: 1.5;-webkit-font-smoothing: antialiased;}img, picture, video, canvas, ......
Guangdong Lingxun Microelectronics Co., Ltd
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750319331 Auxiliary Gate Drive Transformer EP7 Package For SiC-MOSFET / IGBT
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... for 568 Vrms / 800 Vpk Operating temperature: -40 °C up to +130 °C Common control voltages for SiC MOSFET’s High Common-mode Transient Immunity (CMTI) Flyback, LLC, Half-Bridge topologies Up to 6 W output power Wide range ......
SHAREWAY TECHNOLOGY CO., LTD.
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Metal Practical High Voltage SiC Mosfet , N Type Silicon Carbide Semiconductor
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Product Description: Silicon Carbide MOSFET is a type of Metal Oxide Semiconductor Field Effect Transistor (MOSFET) that has been developed to optimize the performance of high-frequency and high-efficiency electrical applications. This Silicon Carbide ......
Reasunos Semiconductor Technology Co., Ltd.
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Size customized 0.32mm thickness Silicon Nitride Substrates For IGBT And SiC MOSFET
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Description Silicon nitride ceramics have many excellent performances such as high hardness, high strength, small thermal expansion coefficient, small high temperature creep, good antioxidant performance, good thermal corrosion performance, and small ......
Zhuhai Cersol Technology Co, Ltd
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3 Inch Silicon Carbide Wafer , Sic Substrate Excellent Transient Characteristics
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...sic wafer,4H High Purity Silicon Carbide Substrates,high purity 4inch SiC substrates ,4inch Silicon Carbide substrates for semiconductor, 4inch SiC substrates ,Silicon Carbide substrates for semconductor ,sic single crystal wafers ,sic ingots for gem Application areas 1 high frequency and high power electronic devices Schottky diodes, JFET, BJT, PiN, diodes, IGBT, MOSFET 2 optoelectronic devices: mainly used in GaN/SiC......
SHANGHAI FAMOUS TRADE CO.,LTD
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6H-N Semi-insulating SiC Substarte / Wafer For MOSFETs、JFETs BJTs High Resistivity Wide Bandgap
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6H-N Semi-insulating SiC substarte/wafer for MOSFETs,JFETs BJTs,high resistivity wide bandgap Semi-insulating SiC substarte/wafer's abstract Semi-insulating silicon carbide (SiC) substrates/wafers have emerged as crucial materials in the realm of advanced ......
SHANGHAI FAMOUS TRADE CO.,LTD
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W Shape Sic Heating Elements High Performance For Powder Metallurgy / Glass
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... foundation for top quality. SiC tube is extruded by 500T press machine, to ensure high density uniform through the whole length. Excellent resistance rate between heat zone and cold zone, to avoid over-temperature of cold zone to damage the furnace body....
Zhengzhou Brother Furnace Co.,Ltd
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Mosfet Tube FDV301N High Performance Low Voltage MOSFET Transistor
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...MOSFET Power Electronics The FDV301N is an N-channel power MOSFET designed for high power switching applications. It is suitable for use in high-efficiency power conversion circuits, such as DC-DC converters, AC-DC converters, and motor control circuits. The device is rated at 60V and 18A, and features low on-resistance, low gate charge, and low capacitance for fast switching speeds. Features: • N-Channel MOSFET • Rated......
Shenzhen Sai Collie Technology Co., Ltd.
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