Industrial Silicon Carbide Power Transistors High Frequency Multipurpose
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...Silicon Carbide MOSFETs, also known as Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) based on Silicon Carbide, are high-power, high-efficiency electronic components used in a wide variety of applications, including Solar Inverters, High-voltage DC/DC Converters, Motor Drivers, UPS Power Supplies, Switching Power Supplies, and Charging Piles. Featuring an N-type silicon carbide......
Reasunos Semiconductor Technology Co., Ltd.
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Industrial Silicon Carbide MOSFET Multipurpose High Frequency Transistor
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Industrial Silicon Carbide MOSFET Multipurpose High Frequency Transistor *, *::before, *::after {box-sizing: border-box;}* {margin: 0;}html, body {height: 100%;}body {line-height: 1.5;-webkit-font-smoothing: ......
Guangdong Lingxun Microelectronics Co., Ltd
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BD135 Silicon NPN Power Transistors high voltage power mosfet dual power mosfet
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BD135 Silicon NPN Power Transistors high voltage power mosfet dual power mosfet This series of plastic, medium−power silicon NPN transistors are designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. ......
Anterwell Technology Ltd.
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BD135 Silicon NPN Power Transistors high voltage power mosfet dual power mosfet
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BD135 Silicon NPN Power Transistors high voltage power mosfet dual power mosfet This series of plastic, medium−power silicon NPN transistors are designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. ......
ChongMing Group (HK) Int'l Co., Ltd
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SI4031-B1-FMR RF Power Transistors - High Frequency And High Power
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SI4031-B1-FMR RF Power Transistor Product Specifications: • Maximum Frequency: 4GHz • Maximum Output Power: 22.5W • Maximum Gain: 15dB • Maximum Output Power @ 1dB Compression: 20W • Maximum Drain Efficiency: 42% • Input VSWR: 1.3:1 • Power Gain: 16dB • ......
Shenzhen Sai Collie Technology Co., Ltd.
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11A Mosfet Power Transistor , High Power Transistor High Frequency Switching
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60V N-Channel AlphaSGT HXY4266 Product Summary VDSS= V ID= 3.6 A 30 z RDS(on) < mΩ@VGS = 10 V 65 z RDS(on) < mΩ@VGS = 4.5V 78 FEATURE TrenchFET Power MOSFET Applications Load Switch for Portable Devices z DC/DC Converter Maximum ratings (at TA=25℃ unless......
Shenzhen Hua Xuan Yang Electronics Co.,Ltd
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RF Power Transistors MRW53601 NPN SILICON RF POWER TRANSISTOR MOTOROLA RF Power Transistors
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... specializes in High frequency microwave devices: These products are widely used in micro-cellular amplifier, CATV radio and television transmitters, GSM / CDMA / PHS ......
Mega Source Elec.Limited
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Silicon Carbide Junction Transistor DF17MR12W1M1HFB68BPSA1 Automotive IGBT Modules
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..., 1200 V 45A (Tj) 20mW, Chassis Mount. Specification Of DF17MR12W1M1HFB68BPSA1 Part Number: DF17MR12W1M1HFB68BPSA1 Technology: SiC (Silicon Carbide Junction Transistor) Drain To Source Voltage (Vdss): 1200V Vgs(Th) (Max) @ Id: 5.15V @ 20mA Power -...
ShenZhen Mingjiada Electronics Co.,Ltd.
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2SC2987 Silicon NPN Power Transistors , 120W 20A High Power Transistor
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2SC2987 NPN PNP Transistors Silicon NPN Power Transistors DESCRIPTION ·With TO-3PN package ·Complement to type 2SA1227 ·High power dissipation APPLICATIONS ·For audio frequency power amplifier applications PINNING PIN DESCRIPTION 1 Base 2Collector;......
DELI ELECTRONICS TECHNOLOGY CO.,LTD
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SGS Silicon Power Transistor High Power PNP Transistor For Electronic Components
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TO-92 Plastic-Encapsulate Transistors 2N5401 TRANSISTOR (PNP) FEATURE Ÿ Switching and Amplification in High Voltage Ÿ Applications such as Telephony Ÿ Low Current Ÿ High Voltage ORDERING INFORMATION Part Number Package Packing Method Pack Quantity 2N5401......
Beijing Silk Road Enterprise Management Services Co.,LTD
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