3 13w igbt diode switching transistor

Brand Name:Hua Xuan Yang

Model Number:AP4434AGYT-HF

Place of Origin:Shenzhen, China

...YT Original MOSFET/IGBT/Diode Switching/Transistor IC Chips Description AP4434A series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the ...

Brand Name:Original

Model Number:MTB15P04J3

Place of Origin:Original

...IGBT/Diode Switching/Transistor IC Chips Small MOQ , Wholesale price , Fast delivery . Product details Type IGBT transistor Conditional New and original MOQ 10pieces SPQ 50 pieces PAYMENT T/T , PAYPAL ,WESTERN UNION,ALIPAY Shipment DHL . FEDEX , UPS , EMS , POST Product Keywords MTB15P04J3 all kinds of IGBT transistor...

Brand Name:Infineon Technologies

Model Number:FF600R12IE4

Place of Origin:Hungary

PrimePACK™ 2 1200 V, 600 A half-bridge dual IGBT module with TRENCHSTOP™ IGBT4, Emitter Controlled 4 diode,FF600R12IE4 You have been redirected from search results. Not what you are looking for? See results for‘FF600R12IE4’. Overview Buy online FF600R12IE4...

Place of Origin:China

Brand Name:ONSEMI

Model Number:NUS5530MN

..., specialize in selling the new and unused, original factory sealed packing electronic components. specialize in IC,MCU,Memory,Module,diode,transistor,IGBT,PCBA, prototype,BOM Kitting. Sunbeam Electronics has

Brand Name:ON/Fairchild

Model Number:G40N60UFD

Place of Origin:Original Factory

...IGBT Transistor N-Channel with Built in Diode 600V 40A 160W, TO-3P Descriptions: Fairchild's UFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses. The UFD series is designed for applications such as motor control and general inverters where high speed switching is a required feature. Features : • High speed switching...

Brand Name:Infineon

Model Number:IKW15N120T2

Place of Origin:Original Factory

...15 A TRENCHSTOP™ IGBT co-packed with free-wheeling diode in a TO-247 package provides significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept. The combination of IGBT with

Brand Name:STMicroelectronics

Model Number:STGWA19NC60HD GWA19NC60HD

Place of Origin:CHINA

...IGBT 31 A 600 V very fast IGBT with Ultrafast diode Transistors - IGBTs - Single 31 A, 600 V, very fast IGBT with Ultrafast diode Product details Description : This device is an ultrafast IGBT. It utilizes the advanced Power MESH™ process resulting in an excellent trade-off between switching...

Brand Name:onsemi

Model Number:NGTB40N120SWG

...Igbt Power Module Transistors NGTB40N120SWG Charging Pile Inverter Welding Chip App Characteristics TJmax = 175°C • Soft Fast Reverse Recovery Diode Optimized for High Speed Switching 10 us Short Circuit Capability These are Pb−Free Devices Basic Data Product Attribute Attribute Value Manufacturer: onsemi Product Category: IGBT Transistors...

Brand Name:FSC

Model Number:HGTG11N120CND

Place of Origin:USA

...IGBT Anti-Parallel Hyperfast Diode 43A 1200V Description : The HGTG11N120CND is a Non-Punch Through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT...

Brand Name:WeEn Semiconductors

Model Number:WG50N65DHWQ

WG50N65DHWQ IGBT Trench Field Stop 650 V 91 A 278 W Through Hole TO-247-3 WeEn Semiconductors WG50N65DHWQ IGBT WeEn Semiconductors WG50N65DHWQ IGBT is a high-speed 650V/50A IGBT with an anti-parallel diode in a TO247 package. This IGBT offers high-speed...

Place of Origin:MALAYSIA

Brand Name:Standard Brand

Model Number:1DI300MP-050-01

1DI300MP-050-01 is a POWER TRANSISTOR MODULE Mega Source Elec. Limited promises: Only 100% New and Original parts Lowest Price & Quickly Delivery Buy more can enjoy a super cheap price Excellent after service and good quality We also purchase the excess...

Brand Name:MMR

Place of Origin:China

New Insulated Gate Bipolar Transistor (IGBT) For B2B Buyers Product Description: An Insulated Gate Bipolar Transistor (IGBT) is a new and versatile electronic device with insulated gate, designed for use in general purpose applications. This device is ...

Brand Name:FSC

Model Number:HGTG11N120CND

Place of Origin:USA

...IGBT Anti-Parallel Hyperfast Diode 43A 1200V Description : The HGTG11N120CND is a Non-Punch Through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT...

Brand Name:Infineon Technoctifier Ilogies/International ReOR

Model Number:IHW30N160R2FKSA1

...Applications Description: TrenchStop® Reverse Conducting (RC-)IGBT with monolithic body diode Features: • Powerful monolithic Body Diode with very low forward voltage • Body diode clamps negative voltages • Trench and Fieldstop technology for 1600 V

Brand Name:Original Factory

Model Number:IKW40N120CS7XKSA1

Place of Origin:CN

... with anti-parallel diode in TO-247 package with EC7 diode inside. Specification Of IKW40N120CS7XKSA1 Part Number: IKW40N120CS7XKSA1 Product Category: IGBT Transistors Technology: Si Package / Case: TO-247-3 Mounting Style: Through Hole Configuration:

Brand Name:Anterwell

Model Number:GP4068D

Place of Origin:original factory

...TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features • Low VCE (ON) Trench IGBT Technology • Low Switching Losses • Maximum Junction temperature 175 °C • 5 µS short circuit SOA • Square RBSOA • 100% of the parts tested for 4X rated current (ILM) • Positive VCE (ON) Temperature co-efficient • Ultra-low VF Hyperfast Diode...

Brand Name:KRUNTER

Model Number:KUP40H12R4-7M

Place of Origin:CHINA

...Transistor Assembly The Ultimate Solution for Power Management Product Description: The Insulated Gate Bipolar Transistor Module, commonly known as IGBT Module, is a crucial component in electronic circuits, offering efficient power control and switching capabilities. This versatile module combines the features of an Insulated Gate Transistor and Diode...

Brand Name:Fairchild

Model Number:HGTG11N120CND

Buy HGTG11N120CND: The Ultimate Solution for High-Power Switching Pros and Cons of HGTG11N120CND: Is it Worth the Investment? Are you looking for a reliable high-power switching solution? Look no further than HGTG11N120CND. This device is designed to ...

Brand Name:International Rectifier

Model Number:IRG4BC20FDPBF

Place of Origin:original

...a variety of applications. This module features an insulated-gate bipolar transistor (IGBT) with a freewheeling diode. It is capable of delivering high current control, high switching speeds, and low power losses. With its wide range of operating voltages,

Brand Name:onsemi

Model Number:FGD3N60UNDF

Place of Origin:United States

FGD3N60UNDF IGBT NPT 600 V 6 A 60 W Surface Mount TO-252AA Datasheet:FGD3N60UNDF Category Single IGBTs Mfr onsemi Product Status Obsolete IGBT Type NPT Voltage - Collector Emitter Breakdown (Max) 600 V Current - Collector (Ic) (Max) 6 A Current - Collector...