high performance amplifier transistor

Brand Name:ADI

Model Number:AD8513ARZ-REEL7

Place of Origin:Multi-origin

...Amplifier IC Chip Product Overview: The AD8513ARZ-REEL7 amplifier IC chip is a low power, high performance amplifier designed for use in a wide range of audio and other applications. It features a low noise amplifier with high input impedance, high slew rate, high linearity, low distortion, and low power consumption. The AD8513ARZ-REEL7 is a highly...

Brand Name:Original Factory

Model Number:IPDQ60R017S7A

Place of Origin:CN

...High Performance 600V Transistors Product Description Of IPDQ60R017S7A IPDQ60R017S7A is optimised for low frequency switching and high current application like circuit breakers. Specification Of IPDQ60R017S7A Part Number: IPDQ60R017S7A Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Transistor...

Brand Name:Hua Xuan Yang

Model Number:AOD424

Place of Origin:ShenZhen China

AOD424 20V N-Channel MOSFET General Description The AOD424 combines advanced trench MOSFET technology with a low resistance package to provide extremely low R DS(ON) . This device is ideal for load switch and battery protection applications. Parameters Par...

Brand Name:P-AMF

Model Number:CD8000

Place of Origin:china

High-Performance 2 Channel Power Amplifier for Audio System Integration CD8000 Operational Principles Amplification Process: The amplifier takes a low-level audio signal (like from a mixer) and uses transistors or tubes in the amplification stage to increase the signal's power. This process involves manipulating the input signal to produce a stronger output without altering the original sound characteristics. Feedback Mechanism: Many amplifiers

Brand Name:SWT

Model Number:SW-PA-8002000-60C

Place of Origin:China

High performance 0.8 - 2 GHz L Band Power Amplifier Psat 57 dBm High Power RF Amplifier For Test and Measurement Description The 0.8-2 GHz Psat 57 dBm RF Power Amplifier Box is a high-performance amplifier designed for a wide range of RF applications, including communications, radar, and electronic warfare. This amplifier...

Brand Name:Mitsubishi

Model Number:RD100HHF1

Place of Origin:JP

...%typ.on HF Band APPLICATION For output stage of high power amplifiers in HF Band mobile radio sets. List Of Other Electronic Components In Stock PART NUMBER MFG/BRAND 　 PART NUMBER MFG/BRAND ...

Place of Origin:MALAYSIA

Brand Name:MOTOROLA

Model Number:PWE6IC9100NB

...HIGH-VOLTAGE, HIGH-CURRENT DARLINGTON TRANSISTOR ARRAY . Part NO: PWE6IC9100NB Brand: MOTOROLA Date Code: 03+ Quality Warranty: 3 Months Mounting Type: Screws Overview Mega Source Electronic Co., LTD specializes in High frequency microwave devices: These products are widely used in micro-cellular amplifier, CATV radio and television transmitters, GSM / CDMA / PHS repeaters, trunk amplifiers, tower mounted amplifiers...

Brand Name:UTC-IC

Model Number:2SD718

Place of Origin:Original

2SD718 TRANSISTOR HIGH POWER AMPLIFIER Features *Recommended for 45~50W Audio Frequency *Amplifier Output Stage. *Complementary to 2SB688. PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO 120 V Collector-Emitter ...

Brand Name:KEC

Model Number:KTD1047

Place of Origin:Korean

KTD1047 NPN Transistor Complementary to KTB817 for 60w High Power Amplifier Application CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 160 V Collector-Emitter Voltage VCEO 140 V ...

Brand Name:TeXin

Model Number:TX-50W

Place of Origin:Shenzhen China

...amplifier module is produced by the manufacturer Texin, which is a module with high power and wide frequency. This 50W signal power amplifier module is a high-performance device designed specifically for enhancing signal strength. It can amplify the input signal to 50W power output, effectively improving the signal coverage and transmission distance. 50w signal power amplifier...

Brand Name:MXT

Model Number:PA758T803M_45-28V

Place of Origin:SHENZHEN,CHINA

...Amplifier Module 758MHz 803MHz LTE 28,LTE 44,TD 700 Downlink Product Description: The RF Power Amplifier offers high performance in the wireless power amplifier and radio frequency power amplifier applications. It is designed to provide a high power output and excellent power added efficiency (PAE) from 20% to 50%. This power amplifier...

Brand Name:ST

Model Number:D45H8

Place of Origin:CHINA

... speed Applications ■ Power amplifier ■ Switching circuits Description The devices are manufactured in low voltage multi epitaxial planar technology. They are intended for general purpose linear and ...

Brand Name:STMicroelectronics

Model Number:STGW35HF60WD

Place of Origin:China

High-Performance STGW35HF60WD 600V 35A 200W TO-247 IGBT Transistor Product Description: The STGW35HF60WD is based on a new advanced planar technology concept to yield an IGBT with more stable switching performance (Eoff) versus temperature, as well as lower conduction losses. The device is tailored to high switching frequency operation (over 100 kHz). Figure 1. Internal schematic diagram Applications: ■ Welding ■ High...

Brand Name:VBE

Model Number:VBE10R5

Place of Origin:CHINA

Excellent Theramal Stability Rf Power Amplifier Transistor LDMOS FET 28V HF to 2.7GHz

Brand Name:HOT DEVICES

Model Number:FP 14000 (MST-2350)

Place of Origin:GuangZhou,China

...High Power Amplifier FP 14000 For Live Sound Quick Detail: 1. Light weight, 2-channel switch mode amplifier, 2x2400W @ 8Ω. 2. Fixed with original NOVER(from UK) power capacitors and SK power transistors to achieve good sound quality. Actual copper heat sink with better structure ensures fast heat dissipation and performance...

Brand Name:Wangtong

Model Number:4 Ports EDFA

Place of Origin:China

...Amplifier 1550nm WDM for Pon CATV System​ Description 1550nm EDFA’s are robust, high performance optical amplifiers designed for CATV and FTTx networks The 1550nm optical amplifier has an output range of 10 to 26dBm at the operating wavelengths of 1530 to 1565nm. The highly...

Brand Name:Diodes Incorporated

Model Number:BS816A-1

Place of Origin:USA

...TRANSISTOR RF Transistors Manufacturer: DIODES Product Category: P-CHANNEL ENHANCEMENT RoHS: Details Mounting Style: - Package / Case: 16NSOP Packaging: Standard Unit Weight: - oz This transistor is suitable for RF power amplifiers in various applications such as wireless communication, broadcasting, and industrial RF equipment. ● P-channel enhancement mode ● DMOS transistor technology ● High...

Brand Name:ON

Model Number:MMBF5484

Place of Origin:ON

...: RF JFET Transistors RoHS: Details Transistor Type: JFET Technology: Si Transistor Polarity: N-Channel Vgs - Gate-Source Breakdown Voltage: - 25 V Id - Continuous Drain Current: 5 mA Maximum Drain ...

Place of Origin:CHINA

Brand Name:EST

Model Number:LTE20W-B3

...High Power Amplifier Module with 40dBm Gain Product Description: Our Digital Power Amplifier Module is a high power module designed for RF jamming applications. With an output power of 33dBm, it allows for a wide range of applications. The passband ripple is exceptionally low, at ≤2.0dB, ensuring stable performance...