lithium cell ic memory chip

Brand Name:ICT

Model Number:PA7540P-15

Place of Origin:Malaysia

PA7540P-15 IC Memory Chip PEEL Array™ Programmable Electrically Erasable Logic Array Most Powerful 24-pin PLD Available - 20 I/Os, 2 inputs/clocks, 40 registers/latches - 40 logic cell output functions - PLA structure with true product-term sharing - ...

Brand Name:original

Model Number:MT25QL512ABB8ESF-0SIT

IC Memory Chip MT25QL512ABB8ESF-0SIT Flash chips SOP-16 Products Description: 1. NOR Flash Serial-SPI 3V 512Mbit 512M/256M/128M 1Bit/2Bit/4Bit 6ns 16Pin SOP-II 2. FLASH - NOR Memory IC 512Mb (64M x 8) SPI 133MHz 16-SO 3. Dual/quad I/O commands for ...

Brand Name:MICRON

Model Number:MT29F64G08CBABAWP

Place of Origin:Malaysia

MT29F64G08CBABAWP:B IC Memory Chip NAND FLASH 8GX8 PLASTIC PBF TSOP 3.3V MASS STORAGE Features • Open NAND Flash Interface (ONFI) 1.0-compliant1 • Single-level cell (SLC) technology • Organization – Page size x8: 2112 bytes (2048 + 64 bytes) – Page size ...

Brand Name:onsemi

Model Number:NV24C04MUW3VLTBG

...ICs Memory Chip 4Kb 1 MHz SMD TSSOP-8 Find information here in stock.xlsx Product Attributes TYPE DESCRIPTION Category Integrated Circuits (ICs) Memory Memory Mfr onsemi Series Automotive, AEC-Q100 Package Tape & Reel (TR) Cut Tape (CT) Digi-Reel® Product Status Active Memory Type Non-Volatile Memory Format EEPROM Technology EEPROM Memory Size 4Kbit Memory Organization 512 x 8 Memory...

Brand Name:WINBOND

Model Number:W25Q64JVSSIQ

Place of Origin:Original Factory

WINBOND W25Q64JVSSIQ SOIC-8 64Mbit SPI Flash Memory Chip IC 133 MHz PACKAGE TYPE DENSITY PRODUCT NUMBER TOP SIDE MARKING SS SOIC-8 208-mil 64M-bit W25Q64JVSSIQ ...

Brand Name:Winbond Electronics

Model Number:W632GG6KB-15

Place of Origin:original

W632GG6KB-15 High Performance Flash Memory Chips Fast and Reliable Data Storage Memory Type Volatile Memory Format DRAM Technology SDRAM - DDR3 Memory Size 2Gbit Memory Organization 128M x 16 Memory Interface Parallel Clock Frequency 667 MHz Write Cycle ...

Brand Name:NXP

Model Number:BZX84-B3V3

Place of Origin:In the Netherlands

BZX84 B3V3 215 IC Memory Chip Screen Printing Stabilized Diode BZX84-B3V3,215 BZX84-B3V3 Screen printingWS2 Chip stabilized diode Install package SOT23 Zener Diodes DIODE ZENER 2 PCT Product Attribute Attribute Value Search ...

Model Number:24lc512

... are original and produced by original manufacturers. Our parts could accept any kinds of testing , if there is any quality problems we will take responsible . Our goods: Active components (IC integrated circuits, memory chips, diodes, transistors, etc.)

Brand Name:VISHAY

Model Number:SI2301CDS-T1-GE3

Place of Origin:USA

Stock IC (Electronic Components Memory chip Support IC BOM) IS62WV51216BLL-55TLI MT41K256M16TW-107 IT:P Digi-Key Part Number SI2301CDS-T1-GE3TR-ND - Tape & Reel (TR) SI2301CDS-T1-GE3CT-ND - Cut Tape (CT) SI2301CDS-T1-GE3DKR-ND - Digi-Reel® Manufacturer ...

Brand Name:Maxim Integrated

Model Number:DS1230Y-150+

Place of Origin:Shenzhen, China

DS1230Y-150+ 256kb (32 k x 8) 150 ns Commercial Temp Non-Volatile SRAM - DIP-28 Description : The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium ...

Categories:Memory IC Chip

Country/Region:china

The BR24G08FVM-3AGTTR,from ROHM Semiconductor,is Memory ICs.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through...

Brand Name:PG

Place of Origin:China

EMMC5.1 Memory Chip 8GB 16GB 32GB 64GB 128GB Emmc Ic BGA153 EMMC4G Flash Memory Ic Chip High Quality The Gemini series eMMC5.1 is based on high-performance controller LDPC technology , Samsung and KIOXIA BiCS5 3DTLC/YMTC QLC NAND Flash for multi-layer ...

Model Number:AM29F800BB-90ED

Brand Name:Original

Place of Origin:US

IC AM29F800BB-90ED TSOP48 EEPROM Memory Chip Product Description Yonlanda Skype: qyt-yolanda1 Email: yonlandasong(at)quanyuantong.net

Place of Origin:Original

W25Q128FVTIG Specifications Part Status Discontinued at Digi-Key Memory Format FLASH Memory Type Non-Volatile Memory Size 128Mb (16M x 8) Speed 104MHz Interface SPI Serial Voltage - Supply 2.7 V ~ 3.6 V Operating Temperature -40°C ~ 85°C (TA) Package / ...

Brand Name:ISSI

Model Number:IS42S16400J-7TL

Place of Origin:CN

IS42S16400J-7TL SDRAM 64MBIT 143MHZ 54TSOP Memory IC FEATURES • Clock frequency: 200, 166, 143, 133 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Single 3.3V power supply • LVTTL ...

Brand Name:SanDisk

Model Number:SDINBDG4-8G-XI2

Place of Origin:USA

Memory Integrated Circuits SDINBDG4-8G-XI2 BGA153 eMMC​ Product Description: Western Digital iNAND IX EM122 EFDa Industrial embedded flash devices provide high reliability and endurance for industrial applications across a wide range of operational ...

Brand Name:Original Factory

Model Number:S80KS5122GABHV023

Place of Origin:CN

...Memory Chip S80KS5122GABHV023 Integrated Circuit Chip 24FBGA Memory IC​ Product Description Of S80KS5122GABHV023 S80KS5122GABHV023 is a high-speed CMOS, self-refresh DRAM, with HYPERBUS™ interface. The DRAM array uses dynamic cells that require periodic refresh. Specification Of S80KS5122GABHV023 Part Number S80KS5122GABHV023 Memory Type Volatile Memory Format PSRAM Technology PSRAM (Pseudo SRAM) Memory Size 512Mbit Memory...

Brand Name:original

Model Number:BQ2201SN

Place of Origin:original

... cell inputs 4.Less than 10ns chip-enable propagation delay 5.5% or 10% supply operation Product Category: Memory Controllers RoHS: Details Memory Type: Nonvolatile SRAM Battery Backup Switching: Yes Supply Voltage - Max: 5.5 V Supply Voltage - Min: 4.5 V

Brand Name:CATL/EVE

Model Number:F72174207

Place of Origin:China

...lithium battery cell 95ah 105ah 115ah 230ah 360ah battery ion lithium cell Welcome to CTS Specification Features: 1.High Capacity and Stable Discharge Voltage. 2.Light weight, small size and high performance. 3.Small internal resistance. 4.Outstanding Discharge performance. . 5. long life >6000 cycles. 6.No memory...