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All low voltage mosfet p channel wholesalers & low voltage mosfet p channel manufacturers come from members. We doesn't provide low voltage mosfet p channel products or service, please contact them directly and verify their companies info carefully.
Total 246 products from low voltage mosfet p channel Manufactures & Suppliers |
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Brand Name:REASUNOS Place of Origin:Guangdong, CN Smaller RSP Low Voltage MOSFET with Trench Process Advantages *, *::before, *::after {box-sizing: border-box; } * {margin: 0; } html, body {height: 100%; } body {line-height: 1.5; -webkit-font-smoothing: antialiased; } img, picture, video, canvas, svg {... |
Reasunos Semiconductor Technology Co., Ltd.
Guangdong |
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Brand Name:Lingxun Place of Origin:China Model Number:LT50P06AD Industrial Durable Low Voltage MOSFET For Battery-Powered Devices *, *::before, *::after {box-sizing: border-box;}* {margin: 0;}html, body {height: 100%;}body {line-height: 1.5;-... |
Guangdong Lingxun Microelectronics Co., Ltd
Guangdong |
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Brand Name:Infineon Technologies Model Number:IRLML5103TRPBF Place of Origin:original ...MOSFET Power Electronics High Performance Low Voltage Single N Channel Logic Level Gate FET IRLML5103TRPBF MOSFET N-Channel 20V 4.2A (Tc) 25W (Tc) Surface Mount PowerPAK 1212-8 Product Description: This IRLML5103TRPBF MOSFET is an N-channel enhancement mode power field-effect transistor in a PowerPAK 1212-8 package. It has a drain-source voltage rating of 20V, a gate-source voltage... |
Shenzhen Sai Collie Technology Co., Ltd.
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Brand Name:Huixin Model Number:BC2301 Place of Origin:China ... Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS -20 V Gate-Source Voltage VGS ±8 V Continuous Drain Current ID -2.3 A Pulsed Drain Current IDM -10 A Continuous Source-Drain Diode Current IS |
Guangdong Huixin Electronics Technology Co., Ltd.
Guangdong |
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Brand Name:ERICSSON Model Number:PKF4510PI Place of Origin:Sweden ... (typ at 5V) • 1,500 Vdc isolation voltage • MTBF > 4.9 million hours at +50°C pin temperature (+40°C ambient) • Low EMI in conformance with class A in CISPR 22 and FCC part 15J The MacroDens3–7W PKF 4000 I series true component level on |
Anterwell Technology Ltd.
Guangdong |
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Brand Name:Hua Xuan Yang Model Number:AP3N10BI Place of Origin:ShenZhen China ...Channel Mosfet Power Transistor Low Voltage 100V N Channel Mosfet Power Working and Characteristics The construction of the power MOSFET is in V-configurations, as we can see in the following figure. Thus the device is also called as the V-MOSFET or V-FET. The V- the shape of power MOSFET... |
Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Guangdong |
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Brand Name:FAIRCHILD Model Number:BF245B Place of Origin:Original ...Channel Amplifiers switching power mosfet low power mosfet N-Channel Amplifiers • This device is designed for VHF/UHF amplifiers. • Sourced from process 50. Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol Parameter Value Units VDG Drain-Gate Voltage 30 V VGS Gate-Source Voltage... |
ChongMing Group (HK) Int'l Co., Ltd
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Brand Name:original Model Number:PBSS4160T,215 Place of Origin:Original Manufacturer ...LOW VCESAT MOSFET POWER TRANSISTOR PNP COMPLEMENT PBSS4160T Goods Condition: Brand New Part Status: Active Lead Free / Rohs: Complaint Function: NPN Mounting Type: Surface Mount Package: SOT23 High Light: n channel mosfet transistor , n channel transistor PBSS4160T NPN low VCEsat transistor in a SOT23 plastic package PNP complement to PBSS5160T FEATURES • Low collector-emitter saturation voltage... |
Shenzhen Huahao Gaosheng Technology Co., Ltd
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Brand Name:Infineon Model Number:STL150N3LLH5 Place of Origin:USA ... Polarity: N-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 30 V Id - Continuous Drain Current: 150 A Rds On - Drain-Source Resistance: 1.75 mOhms Vgs - Gate-Source Voltage: - 22 V, + 22 V Minimum Operating Temperature: - |
Wisdtech Technology Co.,Limited
Guangdong |
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Model Number:FDS6699S Place of Origin:America Brand Name:Fairchild ... performance Trench technology for extremely low RDS (ON) and fast switching 5. High power and current handling capability 6. 100% RG (gate resistance) tested Technological Parameters: Voltage Rating (DC) 30.0 V Current Rating 21.0 A Number of Channels 1 |
Shenzhen Res Electronics Limited
Guangdong |
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Brand Name:STMicroelectronics Model Number:STP100N8F6 Place of Origin:Shenzhen, China ...MOSFET N-channel 80 V, 0.008 Ohm type, 100 A, STripFET F6 Power MOSFET in a TO-220 package General Description : This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. Distinctive Characteristics : Part No: STP100N8F6 Description: Trans MOSFET... |
Shenzhen Weitaixu Capacitor Co.,Ltd
Guangdong |
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Brand Name:Infineon / IR Model Number:IRLML5203TRPBF Place of Origin:CHIAN ...Infineon / IR MOSFET MOSFT P-Ch -30V -3A 98mOhm 9.5nC Log Lvl 1.Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge Lead-Free RoHS Compliant, Halogen-Free 2.Description These P-channel MOSFETs from International ... |
Shenzhen Hongxinwei Technology Co., Ltd
Guangdong |
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Brand Name:ON Model Number:NTJD5121NT1G Place of Origin:ON ... Style: SMD/SMT Package / Case: SC-88-6 Transistor Polarity: N-Channel Number of Channels: 2 Channel Vds - Drain-Source Breakdown Voltage: 60 V Id - Continuous Drain Current: 295 mA Rds On - Drain-Source Resistance: 1.6 Ohms Vgs - Gate-Source Voltage: |
QIN XIN (HONG KONG) ELECTRONIC TECHNOLOGY CO.,LIMITED
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Brand Name:Alpha Omega Semiconductor Inc Model Number:AO3402 ... gate voltages as low as 2.5V. This device is suitable for use as a load switch or other general applications. Basic data 1. product model:AO3402 2. Product features:Switching power supply protection 3. wrap:SOT23-3 4. FET type: Single N-Channel MOS 5 |
KZ TECHNOLOGY (HONGKONG) LIMITED
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Place of Origin:PHILIPPINE Brand Name:Micrel Semiconductor Model Number:MIC5016BWM ...designed for gate control of N-channel, enhancement-mode, power MOSFETs used as high-side or low-side switches. The MIC5016/7 can sustain an on-state output indefinitely. The MIC5016/7 operates from a 2.75V to 30V supply. In highside configurations, the |
Mega Source Elec.Limited
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Brand Name:Diodes Model Number:DMT6009LSS-13 Place of Origin:CHINA ...MOSFET N Channel 60V 10.8A Transistors FETS MOSFET N-CH 60V 10.8A 8SO T&R 2 Discrete Semiconductor DMT6009LSS-13 Specification : Part number DMT6009LSS-13 Category Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Mfr Diodes Incorporated Series - Package Tape & Reel (TR) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage... |
Angel Technology Electronics Co
Hongkong |
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Brand Name:Infineon Technologies/International Rectifier IOR Model Number:IRLR3915TRPBF ... Semiconductor Products N-Channel 55 V 30A (Tc) 120W (Tc) Surface Mount D-Pak Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this product are |
Guangzhou Topfast Technology Co., Ltd.
Guangdong |
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Place of Origin:China Brand Name:OEM Model Number:JKA_009 ...Low Voltage Protection Devices , Reactive Power Compensation Controller General Description The reactive power auto- compensation controller is the auxiliary product for low voltage capacitor screen. According to the different demands of user, the company developed successfully the JKL5C, JKW58, RRCF, JKW9F, JKW5C types of intelligent controller series; Number of the channels... |
Hontai Machinery and equipment (HK) Co. ltd
Guangdong |
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Brand Name:Original Factory Model Number:FF6MR12KM1PHOSA1 Place of Origin:CN ...-applied Thermal Interface Material. Specification Of FF6MR12KM1PHOSA1 Part Number FF6MR12KM1PHOSA1 Configuration 2 N-Channel (Half Bridge) Drain to Source Voltage (Vdss) 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C 250A (Tc) Rds On (Max) @ Id, |
ShenZhen Mingjiada Electronics Co.,Ltd.
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Brand Name:Infineon Model Number:IRFP4368PbF Place of Origin:CHINA ...MOSFET N-CH Si 75V 350A 3-Pin(3+Tab) TO-247AC Tube Product Technical Specifications EU RoHS Compliant with Exemption ECCN (US) EAR99 Part Status Active SVHC Yes SVHC Exceeds Threshold Yes Automotive No PPAP No Product Category Power MOSFET Material Si Configuration Single Process Technology HEXFET Channel Mode Enhancement Channel Type N Number of Elements per Chip 1 Maximum Drain Source Voltage... |
Sunbeam Electronics (Hong Kong) Limited
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