mosfet power transistor low gate charge

Brand Name:Hua Xuan Yang

Model Number:AOD454A

Place of Origin:ShenZhen China

AOD454A N-Channel Enhancement Mode Field Effect Transistor General Description The AOD454A uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. With the excellent thermal resistance of the DPAK package, this device...

Brand Name:Infineon Technologies

Model Number:BSC070N10NS5

Place of Origin:original

... N-channel MOSFET with low drain-source on-resistance. It features low gate charge, low output capacitance, fast switching times, and low gate-to-drain charge. This MOSFET is ideal for use in high-side switching, power supplies, DC-DC converters, and

Brand Name:Original brand

Model Number:NTMFS5H419NLT1G

Place of Origin:Original

Mosfet Power Transistor NTMFS5H419NLT1G MOSFET T8 40V Low Coss SMD/SMT Feature • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • These Devices are Pb−Free and are RoHS Compliant Categories MOSFET T8 40V LOW COSS NTMFS5H419NLT1G Transistor...

Brand Name:Hua Xuan Yang

Model Number:4306W-A

Place of Origin:ShenZhen China

Low Gate Charge Mosfet Power Transistor For Inverter Systems Management What is a Mosfet Power Transistor ? A power MOSFET is a special type of metal oxide semiconductor field effect transistor. It is specially designed to handle high-level powers. The power MOSFET’s are constructed in a V configuration. Therefore, it is also called as V-MOSFET, VFET. The symbols of N- channel & P- channel power MOSFET are shown in the below figure. Mosfet Power

Brand Name:Original brand

Model Number:IRFB38N20DPBF

Place of Origin:Original Manufacturer

...MOSFET POWER TRANSISTOR IRFB38N20DPBF N- CHANNEL SMPS MOSFET FET Type: N-Channel Drain To Source Voltage: 200V Current - Continuous Drain: 43A Drive Voltage: 10V High Light: high power mosfet transistors , n channel mosfet transistor IRFB38N20DPBF N-Channel 200V 43A 3.8W 300W Through Hole TO-220AB SMPS MOSFET Applications l High frequency DC-DC converters l TO-220 is available in PbF as Lead-Free Benefits l Low Gate...

Brand Name:Ti

Model Number:FDPF045N10A

... Trench Technology for Extremely Low RDS(on) High Power and Current Handling Capability RoHS Compliant Description This N-Channel MOSFET is produced using Fairchild Semiconductor®’s advance PowerTrench® process that has been tailored to minimize the on

Brand Name:IOR

Model Number:IRFB38N20DPBF

Place of Origin:CHINA

...MOSFET Applications l High frequency DC-DC converters l TO-220 is available in PbF as Lead-Free Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (SeeApp. Note AN1001) l Fully Characterized Avalanche Voltage and Current FET Type N-Channel Technology MOSFET...

Brand Name:Lingxun

Model Number:LC65R600D

Place of Origin:China

...Low Gate Charge Super Junction Mosfet For SMPS N-channel Super Junction MOSFET Part No.:LC65R600D Package:TO-252 MAIN CHARACTERISTICS ID:7A VDSS:650V RDSON-typ VGS=10V:520mΩ FEATURES Adopt advanced trench technology to provide excellent Rdson, low gate charge and operation with gate voltages as low...

Brand Name:Toshiba

Model Number:TPH2R306NH1,LQ

Place of Origin:Original

... Automotive U-MOSVIII-H Power MOSFETs are 100V N-channel power MOSFETs ideal for automotive applications. They feature low on-resistance with proprietary technology using a Cu connector. They have a narrowed gate threshold voltage range of 2.5V to 3.5V,

Place of Origin:US

Brand Name:Original

Model Number:IRFZ44N

...MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 55V Current - Continuous Drain (Id) @ 25°C 49A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 17.5 mOhm @ 25A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 63nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1470pF @ 25V Power...

Brand Name:Infineon Technologies

Model Number:SPW20N60C3

Place of Origin:China

... of CoolMOS™ with market entry in 2001. C3 is the "working horse" of the portfolio. Summary of Features: Low specific on-state resistance (RDS(on)*A) Very low energy storage in output capacitance (Eoss) @400V Low gate charge (Qg) Fieldproven CoolMOS™

Brand Name:ROHM

Model Number:2SB1316TL

Place of Origin:Original

2SB1316TL Power Transistor low power mosfet switching power mosfet] Features 1) Darlington connection for high DC current gain. 2) Built-in resistor between base and emitter. 3) Built-in damper diode. 4) Complements the ...

Brand Name:NXP

Model Number:BUK201-50Y

Place of Origin:Malaysia

...Transistors PowerMOS transistor TOPFET high side switch DESCRIPTION Monolithic temperature and overload protected power switch based on MOSFET technology in a Nominal load current (ISO) 5 pin plastic envelope, configured as a single high side switch. FEATURES Vertical power DMOS switch Low...

Place of Origin:PHILIPPINE

Brand Name: Technologies AG

Model Number:SPW47N60C3

...Power Transistor Description: The SPW47N60C3 is a Cool MOS Power Transistor. Applications: • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 247 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances Specifications: Datasheets SPW47N60C3 Product Photos TO-247 Pkg Product Training Modules CoolMOS™ CP High Voltage MOSFETs...

Brand Name:JUYI

Model Number:JY09M TO 252

Place of Origin:China

... the high cell density and reduces the on-resistance with low gate charge. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications. FEATURES ●

Place of Origin:China

Brand Name:ONSEMI

Model Number:FDB1D7N10CL7

...Power MOSFET FDB1D7N10CL7 Power MOSFET, N-Channel, Standard Gate, 100 V, 268 A, 1.7 mΩ [Who we are?] Sunbeam Electronics (Hong Kong) Co. Ltd is focus on semi-conductors sourcing and electronic components sale and service for clients over 10 years, specialize in selling the new and unused, original factory sealed packing electronic components. specialize in IC,MCU,Memory,Module,diode,transistor...

Place of Origin:Original

Brand Name:Infineon Technologies

Model Number:IRG7PH42UDPBF

...Power Module Transistors IGBTs Single IRG7PH42UDPBF Specifications Part Status Active IGBT Type Trench Voltage - Collector Emitter Breakdown (Max) 1200V Current - Collector (Ic) (Max) 85A Current - Collector Pulsed (Icm) 90A Vce(on) (Max) @ Vge, Ic 2V @ 15V, 30A Power - Max 320W Switching Energy 2.11mJ (on), 1.18mJ (off) Input Type Standard Gate Charge...

Brand Name:REASUNOS

Place of Origin:Guangdong, CN

...MOSFETs, also known as Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) based on Silicon Carbide, are high-power, high-efficiency electronic components used in a wide variety of applications, including Solar Inverters, High-voltage DC/DC Converters, Motor Drivers, UPS Power Supplies, Switching Power Supplies, and Charging Piles. Featuring an N-type silicon carbide construction, these MOSFETs...

Brand Name:Original Factory

Model Number:IMW65R030M1H

Place of Origin:CN

...Transistors IMW65R030M1H N-Channel SiC Trench Power Transistors TO-247-3​ Product Description Of IMW65R030M1H IMW65R030M1H is 650V CoolSiC M1 SiC Trench Power Device, it is built over the solid silicon carbide technology. Specification Of IMW65R030M1H Part Number: IMW65R030M1H Id - Continuous Drain Current: 58 A Rds On - Drain-Source Resistance: 42 mOhms Vgs - Gate-Source Voltage: - 5 V, + 23 V Qg - Gate Charge...