multi emitter transistor

Brand Name:Anterwell

Model Number:MMBT3904-7-F

Place of Origin:original factory

MMBT3904 NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • Epitaxial Planar Die Construction • Complementary PNP Type Available (MMBT3906) • Ideal for Medium Power Amplification and Switching • Lead Free/RoHS Compliant (Note 2) • Qualified to AEC-Q101 ...

Model Number:MMBT3904-7-F

Place of Origin:original factory

MMBT3904 NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • Epitaxial Planar Die Construction • Complementary PNP Type Available (MMBT3906) • Ideal for Medium Power Amplification and Switching • Lead Free/RoHS Compliant (Note 2) • Qualified to AEC-Q101 ...

Model Number:MJ11033G

Aviation Parts MJ11033G Darlington Transistors Emitter- Base Voltage 5 V Descriptions of Aviation Parts: High−Current Complementary Silicon Power Transistors are for use as output devices in complementary general purpose amplifier applications. Features...

Place of Origin:China

Brand Name:BWT

Model Number:K808F02MN-15.00W

Features: wavelength 808nm output power 15W 375µm fiber bundle diameter 0.22N.A. Applications: Laser pumping Illumination Medical use Material processing Specifications(25℃) Symbol Unit K808F02MN-15.00W Minimum Typical Maximum Parameter CW-Output Power Po...

Brand Name:Microchip / Microsemi

Model Number:JAN2N2222A

Place of Origin:ORIGINAL

...Transistors - BJT 50 V Small-Signal BJT Manufacturer: Microchip Product Category: Bipolar Transistors - BJT RoHS: N Technology: Si Mounting Style: Through Hole Package / Case: TO-18-3 Transistor Polarity: NPN Configuration: Single Maximum DC Collector Current: 800 mA Collector- Emitter Voltage VCEO Max: 50 V Collector- Base Voltage VCBO: 75 V Emitter- Base Voltage VEBO: 6 V Collector-Emitter...

Brand Name:ON

Model Number:FGH60N60SFDTU

Place of Origin:Original

...IGBT Transistors Technology: Si Package / Case: TO-247AB-3 Configuration: Single Collector- Emitter Voltage VCEO Max: 600 V Collector-Emitter Saturation Voltage: 2.3 V Maximum Gate Emitter Voltage: - 20 V, + 20 V Continuous Collector Current at 25 C: 120 A

Place of Origin:ShenZhen China

Brand Name:Hua Xuan Yang

Model Number:A94

...Transistors A94 TRANSISTOR (NPN) FEATURE Low Collector-Emitter Saturation Voltage High Breakdown Voltage Marking :A94 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -400 V VCEO Collector-Emitter Voltage -400 V VEBO Emitter...

Place of Origin:US

Brand Name:Original

Model Number:2SA1941 2SC5198

...- Base Voltage VEBO: - 5 V Collector-Emitter Saturation Voltage: 2 V Gain Bandwidth Product fT: 30 MHz Maximum Operating Temperature: + 150 C Continuous Collector Current: ...

Brand Name:NEC

Model Number:2SC2987

Place of Origin:JAPAN

...Transistors Silicon NPN Power Transistors DESCRIPTION ·With TO-3PN package ·Complement to type 2SA1227 ·High power dissipation APPLICATIONS ·For audio frequency power amplifier applications PINNING PIN DESCRIPTION 1 Base 2Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE VCBO Collector-base voltage Open emitter 140V VCEO Collector-emitter...

Place of Origin:ShenZhen China

Brand Name:OTOMO

Model Number:A42

...Transistors A42 TRANSISTOR (NPN) FEATURE Low Collector-Emitter Saturation Voltage High Breakdown Voltage Marking :D965A MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 310 V VCEO Collector-Emitter Voltage 305 V VEBO Emitter...

Brand Name:original

Model Number:2N3439

Place of Origin:original

...Transistors Through Hole TO-39-3 Manufacturer: original Product Category: Bipolar Transistors - BJT RoHS: N Mounting Style: Through Hole Package / Case: TO-39-3 Transistor Polarity: NPN Configuration: Single Collector- Emitter Voltage VCEO Max: 350 V Collector- Base Voltage VCBO: 450 V Emitter- Base Voltage VEBO: 7 V Collector-Emitter...

Brand Name:Huixin

Model Number:MMBT3906 SOT-23

Place of Origin:China

...Transistor PNP Surface Mount Transistor MMBT3906 SOT-23 MMBT3906 SOT-23 PNP Surface Mount Transistor MMBT3906 SOT-23 Datasheet.pdf FEATURES Complementary Type The NPN Transistor MMBT3904 is Recommended Epitaxial Planar Die Construction MARKING: 2A MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Parameter Symbol Value Units Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -40 V Emitter...

Brand Name:ROHM Semiconductor

Model Number:2SB1424

Place of Origin:JAPAN

...Transistors - BJT ROHS 2SB1424 PNP Low VCE(sat) Transistor Product Paramenters Manufacturer: ROHM Semiconductor Product Category: Bipolar Transistors - BJT RoHS: Details Mounting Style: SMD/SMT Transistor Polarity: PNP Configuration: Single Collector- Emitter Voltage VCEO Max: 20 V Collector- Base Voltage VCBO: 30 V Emitter- Base Voltage VEBO: 6 V Collector-Emitter...

Brand Name:ST

Model Number:BUF420AW

Place of Origin:Malaysia

...LOT SPREAD FOR RELIABLE OPERATION ●LOW BASE-DRIVE REQUIREMENTS Description: The BUF420AW is manufactured using High Voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capacity. It uses a Cellular Emitter structure with

Brand Name:KEC

Model Number:KTD1047

Place of Origin:Korean

KTD1047 NPN Transistor Complementary to KTB817 for 60w High Power Amplifier Application CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 160 V Collector-Emitter Voltage VCEO 140 V Emitter-Base Voltage VEBO 6 V Collector Current DC IC 12 A ...

Place of Origin:/

Brand Name:Fairchild

Model Number:MJD45H11

...Transistors MJD45H11 Fairchild TO-252 New and Original in stock • Load Formed for Surface Mount Application (No Suffix) • Straight Lead (I-PAK: “-I” Suffix) • Electrically Similar to Popular MJE45H • Fast Switching Speeds • Low Collector Emitter Saturation Voltage ​ Transistor Type PNP Current - Collector (Ic) (Max) 8A Voltage - Collector Emitter...

Place of Origin:CN

Brand Name:TYANSHINE

Model Number:TX-BRWG2A140-001

RGBA / RGBW Multi Color High Power LED Diode , Purple LED Doide Emitter Multi Color RGB Purple High Power LED Diode Products’ Features: High Power Emitter LED RGBA/RGBW for stage lighting High light efficacy, low light decay By using original advanced ...

Brand Name:CJ

Model Number:BC848C

Place of Origin:CHINA

BC848C CJ Trans GP BJT NPN 30V 0.1A 250mW 3-Pin SOT-23 T/R Product Technical Specifications EU RoHS Compliant ECCN (US) EAR99 Part Status Active Automotive No PPAP No Type NPN Product Category Bipolar Small Signal Configuration Single Number of Elements...

Brand Name:Diodes Incorporated

Model Number:BC846B-7-F

...Transistors - BJT BIPOLAR TRANSISTOR NPN SOT-23 Product Attribute Attribute Value Select Attribute Manufacturer: Diodes Incorporated Product Category: Bipolar Transistors - BJT RoHS: Details Mounting Style: SMD/SMT Package / Case: SOT-23-3 Transistor Polarity: NPN Configuration: Single Collector- Emitter Voltage VCEO Max: 65 V Collector- Base Voltage VCBO: 80 V Emitter- Base Voltage VEBO: 6 V Collector-Emitter...

Brand Name:Lingxun

Model Number:LGT40N65HB

Place of Origin:China

...Multi Function Gate Bipolar Transistor Features • Positive temperature coefficient • Fast Switching • Low VCE(sat) • Reliable and Rugged PFC applications • Uninterruptible power supplies • Solar inverters Trench and field-stop technology • Low collector to emitter...