power mosfet switch

Brand Name:ROHM

Model Number:2SB1316TL

Place of Origin:Original

2SB1316TL Power Transistor low power mosfet switching power mosfet] Features 1) Darlington connection for high DC current gain. 2) Built-in resistor between base and emitter. 3) Built-in damper diode. 4) Complements the ...

Brand Name:ROHM

Model Number:2SB1316TL

Place of Origin:Original

2SB1316TL Power Transistor low power mosfet switching power mosfet] Features 1) DarliCM GROUPon connection for high DC current gain. 2) Built-in resistor between base and emitter. 3) Built-in damper diode. 4) Complements the 2SD2195 / 2SD1980. Packaging ...

Brand Name:VISHAY

Model Number:SUP75N06-08

Place of Origin:CHINA

SUP75N06-08 N-Channel 60V POWER MOSFET switching regulator ic List Of Other Electronic Components In Stock MEC5025-NU SMSC MCP73834-FCI/MF MICROCHIP M62050FPDFDR RENESAS ...

Brand Name:HT

Model Number:F4N65L TO-220F-3L

Place of Origin:China

...POWER MOSFET 4A 650V Applications In Switching Power Supplies And Adaptors 4A, 650V N-CHANNEL TO-220F-3L POWER MOSFET DESCRIPTION The F4N65L is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in switching power

Place of Origin:China

Brand Name:Lingxun

...Power MOSFET Power Management Solution For Industrial Applications Features: High Power MOSFET is perfect for use in switching power supply applications. With its N-type design and high capacitance, it can handle high power loads with ease. Made by Lingxun, you can trust its high quality and reliability. Applications: Switching Power Supply: The High Power MOSFET product is an ideal choice for switching power...

Brand Name:REASUNOS

Place of Origin:Guangdong, CN

...Power MOSFET is a type of field-effect transistor designed for use in high voltage, high power applications such as Solar Inverter, High-voltage DC/DC Converter, Motor Driver, UPS Power Supply, Switching Power Supply, Charging Pile, etc. It features high frequency operation, low on-resistance and excellent power switching performance. It is suitable for high voltage and high power switching...

Brand Name:Infineon Technologies

Model Number:IPD60R2K1CEAUMA1

Place of Origin:Multi-origin

... Trench MOSFET technology for excellent RDS(ON) and low gate charge. It provides superior switching performance with fast switching times and low-level gate charge. With a wide range of VDSS, this device is suitable for a variety of power applications.

Place of Origin:PHILIPPINE

Brand Name:Fuji Electric

Model Number:FMH23N50E

...power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (3.0±0.5V) High avalanche durability Specifications: part no

Brand Name:Hua Xuan Yang

Model Number:10N60

Place of Origin:ShenZhen China

...POWER MOSFET DESCRIPTION The UTC 10N60K-MTQ is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications of switching power supplies and adaptors. FEATURES RDS(ON) < 1.0 Ω @ VGS = 10 V, ID = 5.0 A * Fast switching...

Brand Name:IXYS

Model Number:IXFK27N80Q

Place of Origin:Original Factory

...Mosfet 800V 27A 0.32 Rds Power MOSFETs HiPerFET Description HiPerFETTM Power MOSFETs Q-CLASS Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr Features • IXYS advanced low Qg process • Low gate charge and capacitances - easier to drive - faster switching • International standard packages z Low RDS (on) z Rated for unclamped Inductive load switching...

Place of Origin:China

Brand Name:ONSEMI

Model Number:NUS5530MN

High Power MOSFET NUS5530MN Integrated with PNP Low VCE(sat) Switching Transistor [Who we are?] Sunbeam Electronics (Hong Kong) Co. Ltd is focus on semi-conductors sourcing and electronic components sale and service for clients over 10 years, specialize...

Brand Name:STMicroelectronics

Model Number:STP15810

Place of Origin:Shenzhen, China

... also reducing internal capacitance and gate charge for faster and more efficient switching. Features : 100% avalanche tested Ultra low on-resistance Distinctive Characteristics : Part No: STP15810 Description: N Channel Power MOSFET Rad Hardened: No

Brand Name:JUYI

Model Number:JY8N5M

Place of Origin:China

... and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications.

Place of Origin:ShenZhen China

Brand Name:OTOMO

Model Number:HXY9926A

...le retaining a 12V VGS(MAX) rating. This device is suitable for use as a unidirectional or bi-directional load switch. Product Summary Absolute Maximum Ratings T =25°C unless otherwise noted Electrical Characteristics (T =25°C unless otherwise noted) A.

Brand Name:JUYI

Model Number:JY8N5M

Place of Origin:China

... and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications. Get more details

Brand Name:NXP

Model Number:BUK201-50Y

Place of Origin:Malaysia

...high side switch DESCRIPTION Monolithic temperature and overload protected power switch based on MOSFET technology in a Nominal load current (ISO) 5 pin plastic envelope, configured as a single high side switch. FEATURES Vertical power DMOS switch Low on-...

Brand Name:Original Factory

Model Number:IPT020N10N5ATMA1

Place of Origin:China

Power MOSFET Original Integrated Circuit IPT020N10N5ATMA1 Product Description Less paralleling required Increased power density Reduced switching and conduction losses Product Specifications Part Number: IPT020N10N5ATMA1 FET Type: N-Channel Operating Temperature: -55°C ~ 175°C (TJ) Power Dissipation (Max): 273W (Tc) Series: OptiMOS™5 Technology: MOSFET...

Brand Name:Vishay Semiconductor

Model Number:SIHF10N40D-E3

Place of Origin:CHINA

...power mosfets N channel transistor operates in enhancement mode Vishay's SIHF10N40D-E3 maximum power dissipation is 33000 mW. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. If you need to either amplify or switch between signals in your design, then Vishay's SIHF10N40D-E3 power MOSFET...

Brand Name:Original Factory

Model Number:A2F12M12W2-F1

Place of Origin:CN

Power Module Fourpack Topology A2F12M12W2-F1 SiC Power MOSFET IGBT Module Full Bridge Description Of A2F12M12W2-F1 This A2F12M12W2-F1 is ACEPACK 2 power module in fourpack topology integrates advanced silicon carbide Power MOSFET technology. The module leverages the innovative properties of the wide-bandgap SiC material and a high-thermal-performance substrate. The result is exceptionally low on-resistance per unit area and excellent switching

Brand Name:ON Semiconductor

Model Number:NCS20074DTBR2G

... two N-channel MOSFETs or IGBTs in a half-bridge configuration. Its fast rise and fall time (15ns typical) and wide input voltage range (4.5V to 18V) make it ideal for high-frequency switching applications. Applications: DC-DC Converters, Motor Drives,