sgt low voltage p channel mosfet

Brand Name:onsemi

Model Number:FDMC86102L

Place of Origin:original

FDMC86102L High-Performance Low-Voltage N-Channel MOSFET Power Electronics shielded Gate 100V 18A Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100 V Current - Continuous Drain (Id) @ 25°C 7A (Ta), 18A (Tc) Drive Voltage (Max Rds On, Min ...

Brand Name:Lingxun

Place of Origin:China

Model Number:CS18N20AP

Multiscene Low Voltage MOSFET N Channel For Power Management *, *::before, *::after {box-sizing: border-box;}* {margin: 0;}html, body {height: 100%;}body {line-height: 1.5;-webkit-font-smoothing: antialiased;}img, picture, video, canvas, svg {display: ...

Brand Name:REASUNOS

Place of Origin:Guangdong, CN

...Low Voltage MOSFET from SGT, a breakthrough FOM optimization which covers more applications. This low gate voltage mosfet offers low power loss and low threshold voltage that allows it to be used in various motor driver, 5G base station, energy storage, high-frequency switch, synchronous rectification, wireless charging, fast charging, DC/DC converter applications. With its trench process technology, this SGT Low

Brand Name:Original Factory

Model Number:NTMFS4C024NT1G

Place of Origin:CN

...Channel Transistors 30V 5-DFN package Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Product Attributes Product Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage...

Brand Name:Hua Xuan Yang

Model Number:AP3N10BI

Place of Origin:ShenZhen China

...Channel Mosfet Power Transistor Low Voltage 100V N Channel Mosfet Power Working and Characteristics The construction of the power MOSFET is in V-configurations, as we can see in the following figure. Thus the device is also called as the V-MOSFET or V-FET. The V- the shape of power MOSFET...

Brand Name:Huixin

Model Number:BC2301

Place of Origin:China

SOT-23 Plastic-Encapsulate MOSFETS BC2301 P-Channel 20-V(D-S) MOSFET BC2301 SOT-23 Datasheet.pdf FEATURES TrenchFET Power MOSFET MARKING: 2301 APPLICATIONS Load Switch for Portable Devices DC/DC Converter Maximum ratings (Ta=25℃ unless otherwise noted) ...

Brand Name:INFINEON

Model Number:IPD80R1K4P7

Place of Origin:original

...resistance and high switching speed, making it very suitable for use in low voltage applications. Conclusion: IPD80R1K4P7 has the following characteristics: Very low switching and conduction losses; High voltage limit, capable of operating at high voltage;

Brand Name:Alpha & Omega Semiconductor Inc.

Model Number:AOD4454

Place of Origin:CHINA

... low RDS(ON).This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 150V Current -

Brand Name:STMicroelectronics

Model Number:STB80PF55T4

Place of Origin:China

...Channel MOSFET for Power Applications The STMicroelectronics STB80PF55T4 is a high-performance P-Channel MOSFET designed for power applications that require efficient switching and high current handling capabilities. With a breakdown voltage of 55V and a continuous drain current rating of 80A, this MOSFET delivers robust performance in demanding environments. The STB80PF55T4 features a low...

Brand Name:Microchip

Model Number:Onsemi

...channel MOSFET with a maximum drain current of 11A and a low on-state resistance of 0.109 ohms. Specification: Maximum Voltage Rating: 900V Maximum Drain Current: 11A On-State Resistance: 0.109 ohms Gate Threshold Voltage: 4V (typical) Features: High voltage capability Low...

Brand Name:Onsemi

Model Number:NVMTS1D2N08H

Place of Origin:Original

... Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant Specifications Product Attribute Attribute Value Product Category: MOSFET Vds - Drain-Source Breakdown Voltage: 80 V Id - Continuous Drain Current:

Brand Name:SHENZHENFREESCALE

Model Number:AOD5N50

Place of Origin:Original

...popular AC-DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability this device can be adopted quickly into new and existing offline power supply designs. ...

Brand Name:SHENZHENFREESCALE

Model Number:AOD5N50

Place of Origin:Original

...popular AC-DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability this device can be adopted quickly into new and existing offline power supply designs. ...

Brand Name:CJ

Model Number:CJ2310 S10

Place of Origin:CHINA

... S10 NPN PNP Transistors N-Channel MOSFET Plastic-Encapsulate MOSFETS DESCRIPTION The CJ2310 uses advanced trench technology to provide excellent RDS(ON) , low gate charge and operation with gate voltage as low as 2.5V. This device is suitable for use...

Place of Origin:ShenZhen China

Brand Name:OTOMO

Model Number:8H02ETS

20V N+N-Channel Enhancement Mode MOSFET DESCRIPTION The 8H02ETSuses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. GENERAL FEATURES VDS = 20V,ID = 7A 8H02TS RDS(ON) < 28mΩ @ VGS...

Brand Name:JUYI

Model Number:JY21L

Place of Origin:China

...IGBT driver based on P-SUB P-EPI process. The floating channel driver can be used to drive two N-channel power MOSFET or IGBT independently which operates up to 150V. Logic inputs are compatible with standard CMOS or LSTTL output, down to 3.3V logic. The

Brand Name:Original brand

Model Number:IRFB38N20DPBF

Place of Origin:Original Manufacturer

...MOSFET POWER TRANSISTOR IRFB38N20DPBF N- CHANNEL SMPS MOSFET FET Type: N-Channel Drain To Source Voltage: 200V Current - Continuous Drain: 43A Drive Voltage: 10V High Light: high power mosfet transistors , n channel mosfet transistor IRFB38N20DPBF N-Channel 200V 43A 3.8W 300W Through Hole TO-220AB SMPS MOSFET Applications l High frequency DC-DC converters l TO-220 is available in PbF as Lead-Free Benefits l Low...

Brand Name:ON Semiconductor

Model Number:MMDF3N04HDR2

Place of Origin:Shenzhen, China

... high energy in the avalanche and commutation modes and the drain−to−source diode has a very low reverse recovery time. These devices are designed for use in low voltage, high speed switching applications where power efficiency is important.

Brand Name:Texas Instruments

Model Number:OPA657N/250

Place of Origin:USA

OPA657N/250 High Speed Operational Amplifiers 1.6GHz Low Noise FET-Input Op Amp Product Category: High Speed Operational Amplifiers RoHS: Details Series: OPA657 Number of Channels: 1 Channel GBP - Gain Bandwidth Product: 1.6 GHz SR - Slew Rate: 700 V/us ...

Brand Name:JUYI

Model Number:JY12M

Place of Origin:China

...Channel 30V MOSFET for BLDC motor driver GENERAL DESCRIPTION The JY12M is the N and P Channel logic enhancement mode power field transistors are produced using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage...