what is a transistor radio

Brand Name:Upperbond

Model Number:Maker

Place of Origin:China

...Transistor Cigarette Packer Detector Pocket Transistor Radio The first "prototype" pocket transistor radio was shown by INTERMETALL (a company founded by Herbert Mataré in 1952) at the Internationale Funkausstellung Düsseldorf between August 29, 1953 and September 6, 1953. The first "production" pocket transistor radio was the Regency TR-1, released in October 1954. Point-Contact Transistor...

Brand Name:Mitsubishi

Model Number:RA03M8087M-101

Place of Origin:JP

... in the 806 to 870-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to

Brand Name:original

Model Number:M68702H

Place of Origin:Original Manufacturer

...TRANSISTORS M68702H FOR FM MOBILE RADIO Condition: 100% Brand New Product Part Status: Active Package: H2 Lead Free Status / RoHS Status: Compliant Output Power: 60W Voltage: 12.5V High Light: n channel mosfet transistor , n channel transistor M68702H 150-175MHz, 12.5V, 60W, RF Power module transistor for FM MOBILE RADIO...

Place of Origin:MALAYSIA

Model Number:PTB20147

...Radio RF Power Transistor . Part NO: PTB20147 Brand: Date Code: 02+ Quality Warranty: 3 Months Mounting Type: Screws Overview Mega Source Electronic Co., LTD specializes in High frequency microwave devices: These products are widely used in micro-cellular amplifier, CATV radio...

Brand Name:Analog Devices Inc.

Model Number:HMC536LP2E

Place of Origin:Multi-origin

...Transistor High Performance Low Noise High Gain HMC536LP2E Power Transistor Product Description: The HMC536LP2E is a GaAs pHEMT MMIC power amplifier which operates between DC and 6 GHz. This amplifier is designed for applications such as point-to-point radios, point-to-multipoint radios...

Brand Name:Anterwell

Model Number:2SC1972

Place of Origin:original factory

NPN SILICON rf power mosfet transistors for RF power amplifiers on VHF band Mobile radio , 2SC1972 DESCRIPTION: The ASI 2SC1972 is Designed for RF power amplifiers on VHF band mobile radio applications. FEATURES INCLUDE: • Replaces Original 2SC1972 in ...

Brand Name:NEC

Model Number:2SC2690

Place of Origin:JAPAN

2SC2690 : Use in audio and radio Frequency power amplifiers NEC general purpose transistors DESCRIPTION The 2SC2690, 2SC2690A are general purpose transistors designed for use in audio and radio frequency power amplifiers. FEATURES ●Suitable for use in ...

Brand Name:EMPJAMMER

Model Number:NO22

Place of Origin:China

2018 fruit machine jammer for sale emp jammer transistor for Europe here to buy it online jammer slot modificado con el transistor e inductor que le hace falta para q de chicha, no me ago responsable de lo que agan con el xahi, los jammer chinos no ...

Brand Name:LRC

Model Number:L2N7002KLT1G

Place of Origin:CHINA

... Compliance Code: unknown ECCN Code: EAR99 Manufacturer: LRC Leshan Radio Co Ltd Risk Rank: 5.54 Configuration: SINGLE WITH BUILT-IN DIODE DS Breakdown Voltage-Min: 60 V Drain Current-Max (...

Brand Name:MITSUBISHI

Model Number:RA35H1516M

Place of Origin:Original

... range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to 60 dB. The ...

Model Number:IRFP150MPBF

Place of Origin:United States

Brand Name:Original

#detail_decorate_root .magic-0{width:750px}#detail_decorate_root .magic-1{overflow:hidden;width:750px;height:405.95399188092017px;margin-top:0;margin-bottom:0;margin-left:0;margin-right:0}#detail_decorate_root .magic-2{margin-top:-3px;margin-left:0;width:...

Brand Name:Original

Model Number:SZA5044Z

Place of Origin:Original

SZA5044Z Radio Frequency Amplifiers RF Amplifier IRFHM9331TRPBF MSP430FR2100IPW16R Wireless RF Integrated Circuits Product Description RFMD’s SZA-5044 is a high efficiency class AB Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost ...

Brand Name:Hua Xuan Yang

Model Number:6N60

Place of Origin:ShenZhen China

6N60 Z 6.2A 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 6N60Z is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics...

Categories:Radio Frequency IC

Country/Region:china

Good quality Electronic Component provider from China——GS Electronics, Product Details: AD8361ARMZ Introduction: The AD8361ARMZ is a high-performance logarithmic amplifier designed by Analog Devices. This precision device is engineered to provide accurate...

Model Number:BLF174XRS

Place of Origin:Malaysia

Brand Name:KAIGENG

BLF174XRS N/A Electronic Components IC MCU Microcontroller Integrated Circuits BLF174XRS #detail_decorate_root .magic-0{border-bottom-style:solid;border-bottom-color:#53647a;font-family:Roboto;font-size:24px;color:#53647a;font-style:normal;border-bottom-...

Brand Name:FLY

Model Number:238714-006-D

Place of Origin:CN

... as transistor radio medium wave antenna coil. Single layer winding is a kind of winding with only one effective side of coil embedded in each stator slot, so its total ...

Brand Name:OEM 9 Volt Battery

Model Number:9V Size battery

Place of Origin:China

... Battery AM9VF 6LR61 9V 9Volt - Household Batteries The 9V battery is an extremely common battery that was first used in transistor radios. It features a rectangular prism shape that utilizes a pair of snap connectors which are located at the top of the

Brand Name:HEZHI

Model Number:N/A

Place of Origin:China

... with insulated wires on a paper tube or bakelite frame. Such as transistor radio medium wave antenna coil. 2. Honeycomb coil If the winding coil, its plane is not parallel to the rotating surface, but intersects at a certain Angle, this ...

Brand Name:Nanker

Model Number:MCSCSXXXX-XXX

Place of Origin:China

... types and grades of material (NiZn) for the best possible interference suppression Application For transistor bases or feed line To avoid radio frequency interferences in switching amplifiers In power electronics for IGBT- and thyristor circuits Part No.