Gauges

Model Number:FGW75N65WE-HXY

Product Overview The FGW75N65WE is a 650V, 75A Insulated Gate Bipolar Transistor (IGBT) designed for high-performance applications. It features easy paralleling capability due to a positive temperature coefficient in VCESAT, low EMI, low gate charge, and ...

Model Number:IRGP4790-EPBF-HXY

Product Overview The IRGP4790-EPBF is an Insulated Gate Bipolar Transistor (IGBT) designed for high-performance applications. It features easy paralleling capability due to a positive temperature coefficient in VCESAT, low EMI, low gate charge, and low ...

Model Number:BIDW50N65T-HXY

Product Overview The BIDW50N65T is an Insulated Gate Bipolar Transistor (IGBT) utilizing advanced Trench and Field Stop (T-FS) technology. This design enhances performance by reducing conduction losses, improving switching speed, and increasing avalanche ...

Model Number:AOK40B65HQ2

Product Overview The AOK40B65HQ2 is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for demanding applications. It features easy paralleling capability due to a positive temperature coefficient in Vcesat, low EMI, low gate charge, and ...

Model Number:JNG15T65KS1

JNG15T65KS1 IGBT JIAEN Trench IGBTs offer lower losses and higher energy efficiency, making them suitable for applications such as motor control, general inverters, and other soft switching applications. They feature high-speed switching, higher system ...

Model Number:STGWA40HP65FB-HXY

Product Overview The STGWA40HP65FB is an Insulated Gate Bipolar Transistor (IGBT) from HUAXUANYANG HXY ELECTRONICS CO.,LTD. It offers easy paralleling capability due to a positive temperature coefficient in Vcesat, low EMI, low gate charge, and low ...

Model Number:FF450R17ME4

Product Overview The FF450R17ME4 is an EconoDUAL3 IGBT module featuring Trench/Fieldstop IGBT4 and Emitter Controlled 3 diode with NTC. It offers low VCEsat with a positive temperature coefficient, high power density, and an isolated base plate. This ...

Model Number:IXYH100N65C3-HXY

Product Overview The IXYH100N65C3 is a 650V, 75A Insulated Gate Bipolar Transistor (IGBT) designed for high-performance applications. It features easy paralleling capability due to a positive temperature coefficient in VCESAT, low EMI, low gate charge, and...

Model Number:IKW15N120H3

Product Description The IKW15N120H3 is a high-speed switching IGBT in a DuoPack configuration, featuring TRENCHSTOPTM technology. This technology provides a very low VCEsat, low EMI, and a very soft, fast recovery anti-parallel diode. It is designed for ...

Model Number:IGW50N60H3-HXY

Product Overview The IGW50N60H3 is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for various power electronic applications. It features easy paralleling capability due to a positive temperature coefficient in VCESAT, low EMI, low ...

Model Number:IHW30N65R5

Product Description The IHW30N65R5 is a Reverse conducting IGBT from Infineon's Resonant Switching Series, featuring a powerful monolithic reverse-conducting diode with a low forward voltage. It utilizes TRENCHSTOPTM technology for tight parameter ...

Model Number:IKW25N120T2

IKW25N120T2 TrenchStop 2nd generation Series The IKW25N120T2 is a 1200V IGBT from Infineon's TrenchStop 2nd generation series, designed for high-performance applications such as frequency converters and uninterrupted power supplies. It features a short ...

Model Number:FF225R12ME4

FF225R12ME4 IGBT Module The FF225R12ME4 is an EconoDUAL3 module featuring Trench/Fieldstop IGBT4 and Emitter Controlled HE diode with NTC. It offers low VCEsat and operates at Tvj op = 150C. This module is suitable for applications such as motor drives, ...

Model Number:JNG15T65PS1

Product Overview JIAEN Trench IGBTs offer lower losses and higher energy efficiency, suitable for applications such as motor control, general inverters, and other soft switching applications. This IGBT features 650V, 15A rating, a typical VCE(sat) of 1.9V...

Model Number:JNG75T65HMU2

Product Overview JIAEN Trench IGBTs are designed to reduce conduction loss, improve switching performance, and enhance avalanche energy. They are suitable for applications such as motor drives, UPS, Boost converters, portable power stations, and other soft...

Model Number:JNG15T65HS1

Product Overview The JIAEN JNG15T65HS1 is a 650V, 15A Trench IGBT designed for applications requiring lower losses and higher energy efficiency. It features high-speed switching, soft current turn-off waveforms, and a square RBSOA. Ideal for motor control...

Model Number:GL150HF120F1UR1

Product Overview The GL150HF120F1UR1 is a 1200V, 150A IGBT half-bridge module featuring planar field-stop technology for high RBSOA capability and low turn-off losses. It is suitable for applications such as inductive heating, welding, and high-frequency ...

Model Number:KGM40N120AI

Product Overview This is a 40A, 1200V Silicon Power IGBT from KIA SEMICONDUCTORS. It features low VCE(sat) of 1.91V (typ.), fast switching, high ruggedness, and short-circuit rating. Ideal for applications such as Solar Inverters, Uninterrupted Power ...

Model Number:NGB18N40ACLBT4G

Product Overview The NGB18N40ACLB is a Logic Level Insulated Gate Bipolar Transistor (IGBT) designed for ignition and high-voltage/high-current switching applications. It features monolithic circuitry with integrated ESD and Over-Voltage clamped protection...

Model Number:YGW40N65F1A2

Product Overview The YGW40N65F1A2 is a 650V / 40A Trench Field Stop IGBT designed for high-speed switching applications. It offers high breakdown voltage for improved reliability, enhanced ruggedness, temperature stability, and low VCEsat. Its positive ...