Measurement & Analysis Instruments

Model Number:IGW40N60TP-HXY

Product Overview The IGW40N60TP is an Insulated Gate Bipolar Transistor (IGBT) designed for high-performance applications. It offers easy paralleling capability due to its positive temperature coefficient in Vcesat, low EMI, low gate charge, and low ...

Model Number:FP25R12W2T4

FP25R12W2T4 IGBT-Module The FP25R12W2T4 is an IGBT module designed for inverter and brake-chopper applications. It offers high performance and reliability for various power electronic systems.Technical Specifications Component Parameter Value Unit ...

Model Number:AOKS40B65H1

Product Overview The AOKS40B65H1 is an Insulated Gate Bipolar Transistor (IGBT) designed for high-performance applications. It features easy paralleling capability due to a positive temperature coefficient in Vcesat, low EMI, low gate charge, and low ...

Model Number:JNG40T65HS1

Product Overview JIAEN Trench IGBTs offer lower losses and higher energy efficiency for applications such as Motor control, general inverter, and other soft switching applications. This IGBT features 650V, 40A capability with a typical VCE(sat) of 2.0V at ...

Model Number:IKQ140N120CH7XKSA1-HXY

Product Overview The IKQ140N120CH7XKSA1 is a 1200V, 140A IGBT designed for high-efficiency applications. It features high input impedance, low switching losses, low saturation voltage (VCE(SAT)), and low conduction loss. This device is copacked with a fast...

Model Number:GL75HF120F1UR1

Product Overview The GL75HF120F1UR1 is a 1200V, 75A IGBT half-bridge module featuring Planar Field-stop Technology for high RBSOA capability and low turn-off losses. It is ideal for applications such as inductive heating, welding, and high-frequency ...

Model Number:IGW40N60TP

Product Overview The IGW40N60TP is a 600V DuoPack IGBT from Infineon's TRENCHSTOPTM Performance series. It utilizes TRENCHSTOPTM technology, offering very low VCEsat, low turn-off losses, short tail current, and low EMI. This IGBT is qualified according...

Model Number:NGTG35N65FL2WG-HXY

Product Overview The NGTG35N65FL2WG is an Insulated Gate Bipolar Transistor (IGBT) designed for high-performance applications. It offers easy paralleling capability due to its positive temperature coefficient in VCESAT, low EMI, low gate charge, and low ...

Model Number:MBQ40T120QESTH-HXY

Product Overview The MBQ40T120QESTH is an Insulated Gate Bipolar Transistor (IGBT) utilizing advanced Trench and Field Stop (T-FS) technology. This technology enhances performance by reducing conduction loss, improving switching characteristics, and ...

Model Number:IKW50N60H3

Product Overview The IKW50N60H3 is a high-speed IGBT in Trench and Fieldstop technology, featuring a soft, fast recovery anti-parallel diode. This third-generation device offers very low VCEsat, low EMI, and a maximum junction temperature of 175C. It is ...

Model Number:APT68GA60B-HXY

Product Overview The APT68GA60B is an Insulated Gate Bipolar Transistor (IGBT) from HUAXUANYANG HXY ELECTRONICS CO.,LTD. It offers easy paralleling capability due to its positive temperature coefficient in VCESAT, low EMI, low gate charge, and low ...

Model Number:JNG40T120HS

JNG40T120HS IGBT JIAEN Trench IGBTs offer lower losses and higher energy efficiency for applications such as IH (induction heating), UPS, general inverters, and other soft switching applications. They feature high-speed switching, higher system efficiency...

Model Number:AIGW50N65H5-HXY

AIGW50N65H5 Insulated Gate Bipolar Transistor The AIGW50N65H5 is a 650V, 50A Insulated Gate Bipolar Transistor (IGBT) designed for high-performance applications. It features easy paralleling capability due to a positive temperature coefficient in VCESAT, ...

Model Number:IKW40N65H5

Product Overview The IKP40N65H5 and IKW40N65H5 are high-speed 5th generation IGBTs featuring TRENCHSTOPTM 5 technology, copacked with RAPID 1 fast and soft antiparallel diodes. These devices offer best-in-class efficiency in hard switching and resonant ...

Model Number:FF600R12ME4

Product Overview The FF600R12ME4 is an EconoDUAL3 IGBT module featuring Trench/Fieldstop IGBT4 and Emitter Controlled Diode with NTC. It offers low VCEsat with a positive temperature coefficient, high power density, and an isolated base plate. Ideal for ...

Model Number:SPT50N65F1A1T8TL-HXY

Product Overview The SPT50N65F1A1T8TL is a 650V, 50A Insulated Gate Bipolar Transistor (IGBT) designed for high-reliability applications. It features easy paralleling capability due to a positive temperature coefficient in VCESAT, low EMI, low gate charge...

Model Number:IGW40N120H3-HXY

Product Overview The IGW40N120H3 is an Insulated Gate Bipolar Transistor (IGBT) designed for high-performance applications. It features easy paralleling capability due to a positive temperature coefficient in VCESAT, low EMI, low gate charge, and low ...

Model Number:IGW50N60H3-HXY

Product Overview The IGW50N60H3 is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for various power electronic applications. It features easy paralleling capability due to a positive temperature coefficient in VCESAT, low EMI, low ...

Model Number:GWA40MS120DF4AG-HXY

Product Overview The GWA40MS120DF4AG is an Insulated Gate Bipolar Transistor (IGBT) utilizing advanced Trench and Field Stop (T-FS) technology. This design enhances performance by reducing conduction losses, improving switching characteristics, and ...

Model Number:JNG50N120LS

Product Overview The JNG50N120LS is a 1200V, 50A NPT IGBT from JIAEN Semiconductor, designed for high-speed switching applications. It offers lower losses and higher energy efficiency, making it suitable for Induction Heating (IH), UPS, general inverters...