Micrometers

Model Number:BC850B

Product Overview The BC846 to BC850 series are NPN silicon epitaxial transistors designed for switching and amplifier applications. Complementary PNP transistors in the BC856 to BC860 series are recommended for paired applications. These transistors are ...

Model Number:MMBT2907A

Product Overview The MMBT2907A is a PNP transistor from ElecSuper, designed for general-purpose applications. It offers complementary functionality to the MMBT2222A, featuring a power dissipation of 250mW and high stability and reliability. Packaged in a ...

Model Number:BC807-25

BC807 NPN Transistor The BC807 is an NPN epitaxial planar die construction transistor, ideally suited for automatic insertion. A complementary PNP type (BC817) is available. It offers a high DC current gain and is designed for general-purpose applications....

Model Number:MMBT5551

Product Overview The MMBT5551 is a high voltage NPN silicon transistor designed for medium power amplification and switching applications. It is complementary to the MMBT5401 and offers excellent performance characteristics.Product Attributes Brand: ...

Model Number:BCX53 AH HD

Product Overview The BCX51/BCX52/BCX53 series are PNP bipolar transistors designed for medium power general purpose applications. They offer high current and low voltage capabilities, making them suitable for drive stages of audio amplifiers. These devices...

Model Number:BC850B

Product Overview The BC850 is an NPN bipolar transistor designed for automatic insertion, making it ideal for high-volume manufacturing. It is well-suited for switching and AF amplifier applications. This surface mount device comes in a SOT-23 package....

Model Number:BC847B

Product Overview The BC847 is an NPN bipolar transistor, complementary to the BC857. It is ideally suited for automatic insertion and is designed for switching and AF amplifier applications. This surface mount device comes in a SOT-23 package.Product ...

Model Number:S9013

Product Overview The S9013 is an NPN bipolar transistor designed for surface mount applications. It offers complementary characteristics to the S9012, featuring excellent hFE linearity and high collector current capabilities. This device is housed in a ...

Model Number:BC847CW

Product Overview The BC847W is an NPN bipolar transistor designed for surface mount applications. It offers excellent hFE linearity and high collector current capabilities, making it a complementary part to the BC857W. This device is suitable for various ...

Model Number:BC856B

Product Overview The BC856-8 series are PNP bipolar transistors in a SOT-23 plastic-encapsulated package. Ideally suited for automatic insertion, these transistors are designed for switching and AF amplifier applications. They offer high diode ...

Model Number:13001 T

Product Overview The 13001 transistor is an NPN type, designed for power switching applications. It features a TO-92 plastic encapsulation.Product Attributes Brand: SHENZHEN HAOLIN ELECTRONICS TECHNOLOGY CO., LTD Origin: CHINA Encapsulation: TO-92 ...

Model Number:BFS17SH6327

Product Overview The BFS17S is a NPN Silicon RF Transistor designed for broadband amplifiers up to 1 GHz. It is suitable for collector currents ranging from 1 mA to 20 mA. This Pb-free (RoHS compliant) package is ESD sensitive and requires careful handling...

Model Number:BC817UPNE6327HTSA1

Product Overview The BC817UPN is an NPN Silicon AF Transistor Array designed for AF stages and driver applications. It features high current gain, low collector-emitter saturation voltage, and consists of two internally isolated NPN/PNP transistors in a ...

Model Number:BFQ19SH6327

Product Overview The BFQ19S is a low-noise silicon bipolar RF transistor designed for low-noise, low-distortion broadband amplifiers. It is suitable for antenna and telecommunications systems operating up to 1.5 GHz with collector currents ranging from 10 ...

Model Number:2SA1869

Product Overview The 2SA1869 is a Silicon PNP Power Transistor from ISC, designed for power amplifier applications. It features a collector-emitter breakdown voltage of -50V, good linearity of hFE, and is a complement to type 2SC4935. Its robust device ...

Model Number:BD678

Product Overview The ISC BD678 is a Silicon PNP Darlington Power Transistor designed for use as output devices in complementary general-purpose amplifier applications. It offers a Collector-Emitter Breakdown Voltage of -60V and a minimum DC Current Gain (...

Model Number:BFR182WH6327XTSA1

Product Overview The BFR182W is a low-noise silicon bipolar RF transistor designed for high-gain broadband amplifiers. It operates effectively at collector currents ranging from 1 mA to 20 mA, offering a transition frequency (fT) of 8 GHz and a minimum ...

Model Number:MMBT3904LT1HTSA1

Product Overview The SMBT3904/MMBT3904 and SMBT3904S are NPN silicon switching transistors designed for high DC current gain from 0.1 mA to 100 mA. They feature a low collector-emitter saturation voltage and are Pb-free (RoHS compliant) and qualified ...

Model Number:2SA1744

Product Overview The ISC 2SA1744 is a Silicon PNP Power Transistor designed for high-speed switching applications. It features high DC current gain (hFE) at low saturation voltage (VCE(sat)), making it ideal for use as a driver in DC/DC converters and ...

Model Number:3DD13003E1D-92-FJ

Product Overview The 3DD13003E1D is a high voltage, fast-switching NPN power transistor designed for various power applications. It offers high breakdown voltage, high current capability, high switching speed, and high reliability, making it suitable for ...