80a tc continuous drain id transistor

Model Number:STP80NF55-08

Brand Name:Original

Place of Origin:US

... N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 55V Current - Continuous Drain (Id) @ 25°C 80A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 8mOhm @ 40A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg...

Place of Origin:Original

...Drain to Source Voltage (Vdss) 55V Current - Continuous Drain (Id) @ 25°C 80A (Tc) Drive Voltage (Max Rds On,Min Rds On) - Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 45nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 2200pF @ 25V Vgs (Max) - FET Feature - Power Dissipation (Max) 110W (Tc) Rds On (Max) @ Id...

Brand Name:Original Factory

Model Number:IPD050N10N5ATMA1

Place of Origin:CN

...80A 150W Transistors Surface Mount Product Description Of IPD050N10N5ATMA1 IPD050N10N5ATMA1 is N-Channel 100 V 80A (Tc) 150W (Tc) Surface Mount PG-TO252-3 Transistors. Specification Of IPD050N10N5ATMA1 Part Number IPD050N10N5ATMA1 Transistor Polarity: N-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 100 V Id - Continuous Drain...

Brand Name:onsemi

Model Number:FDD86367

Place of Origin:original

...Transistor High Performance Efficiency Reliable Solution FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 80 V Current - Continuous Drain (Id) @ 25°C 100A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 4.2mOhm @ 80A, 10V Vgs(th) (Max) @ Id...

Brand Name:Infineon

Model Number:IRLR7843TRPBF

Place of Origin:Original Factory

... Parameter Max. Units VDS Drain-to-Source Voltage 30 V VGS Gate-to-Source Voltage ± 20 ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 161f A ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 113f IDM Pulsed Drain Current c 620 PD @TC = 25°C

Brand Name:Infineon Technologies

Model Number:BUF420AW

Place of Origin:United States

... Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650 V Current - Continuous Drain (Id) @ 25ﾂｰC 31.2A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 110mOhm @ 12.7A, 10V Vgs(th) (Max) @ Id 4

Brand Name:Anterwell

Model Number:IRFB31N20DPBF

Place of Origin:original factory

... COSS to Simplify Design,(See AN 1001) Fully Characterized Avalanche Voltage and Current Absolute Maximum Ratings Parameter Max. Unit ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 31‡ A ID @ TC = 100°C Continuous Drain Current,

Categories:RF Transistors

Country/Region:china

...Tc) 330W (Tc) Through Hole TO-220AB RF Transistors Manufacturer: Infineon Product Category: MOSFETs RoHS: - REACH - SVHC: - Technology: Si Mounting Style: Through Hole Package / Case: TO-220-3 Transistor Polarity: N-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 75 V Id - Continuous Drain Current: 130 A Rds On - Drain...

Brand Name:Infineon

Model Number:IRLR7843TRPBF

Place of Origin:Original Factory

... Parameter Max. Units VDS Drain-to-Source Voltage 30 V VGS Gate-to-Source Voltage ± 20 ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 161f A ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 113f IDM Pulsed Drain Current c 620 PD @TC = 25°C

Brand Name:VISHAY

Model Number:SIHB22N60E-E3

Place of Origin:CHINA

... Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 21A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 180 mOhm @ 11A, 10V Vgs(th)

Brand Name:DELI

Model Number:AOTF14N50

Place of Origin:Original

... Oxide) Drain to Source Voltage (Vdss):500V Current - Continuous Drain (Id) / 25°C:14A (Tc) Drive Voltage (Max Rds On, Min Rds On):10V Rds On (Max) / Id, Vgs:380 mOhm / 7A, 10V Vgs(th) (Max) / Id:4.5V / 250µA Gate Charge (Qg) (Max) / Vgs:51nC / 10V Vgs (...

Brand Name:Infineon Technologies/International Rectifier IOR

Model Number:IRF1404ZPBF

Place of Origin:CHINA

...Transistors - FETs, MOSFETs - Single Mfr Infineon Technologies Series HEXFET® Package Tube FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40 V Current - Continuous Drain (Id) @ 25°C 180A (Tc) Drive Voltage (Max Rds On,

Brand Name:Nexperia

Model Number:BUK9M3R3-40HX

...Transistors - FETs, MOSFETs - Single Mfr Nexperia USA Inc. Series Automotive, AEC-Q101 Package Tape & Reel (TR) Cut Tape (CT) Digi-Reel Product Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40 V Current - Continuous Drain (Id) @ 25°C 80A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id...

Brand Name:INFINEON

Model Number:BTS282ZE3230

Place of Origin:INFINEON

... RoHS: N Technology: Si Mounting Style: Through Hole Package / Case: TO-220-7 Transistor Polarity: N-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 49 V Id - Continuous Drain Current: 80 A Rds On - Drain-Source Resistance: 6

Brand Name:Original

Model Number:IRLML2244TRPBF

Place of Origin:Original

...Transistor Integrated Circuits PRODUCT DESCRIPTION MOSFET P-CH 20V 4.3A SOT23 PRODUCT PROPERTIES Mfr Infineon Technologies Series HEXFET Product Status Active FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20 V Current - Continuous Drain (Id) 4.3A (Ta) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V Rds On (Max) @ Id, Vgs 54mOhm @ 4.3A, 4.5V Vgs(th) (Max) @ Id...

Brand Name:STMicroelectronics

Model Number:STB80PF55T4

Place of Origin:China

High-Performance STB80PF55T4 P-Channel MOSFET for Power Applications The STMicroelectronics STB80PF55T4 is a high-performance P-Channel MOSFET designed for power applications that require efficient switching and high current handling capabilities. With a ...

Brand Name:original

Model Number:FCB36N60NTM

Place of Origin:original

... Polarity: N-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 600 V Id - Continuous Drain Current: 36 A Rds On - Drain-Source Resistance: 90 mOhms Vgs - Gate-Source Voltage: - 30 V, + 30 V Vgs th - Gate-Source Threshold ...

Model Number:SMP3003-DL-1E

Place of Origin:onsemi

...) Cut Tape (CT) Digi-Reel® Product Status Obsolete FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 75 V Current - Continuous Drain (Id)

Brand Name:ST

Model Number:PD57018-E

...-Continuous Drain Current: 2.5 A Vds-drain-source breakdown voltage: 65 V Rds On-Drain Source On Resistance: 760 mOhms Operating frequency: 1 GHz Gain: 16.5 dB Output power: 18 W Minimum operating ...

Brand Name:VISHAY

Model Number:S525T-GS08

Place of Origin:USA

... Product Paramenters Manufacturer: Vishay Product Category: RF MOSFET Transistors Transistor Polarity: N-Channel Technology: Si Id - Continuous Drain Current: 30 mA Vds - Drain-Source Breakdown Voltage: 20 V Minimum Operating Temperature: - 55 C Maximum Operating...